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Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

Published online by Cambridge University Press:  15 February 2011

Lihong Teng  and
Wayne A. Anderson
Lihong Teng
Affiliation:
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260.
Wayne A. Anderson
Affiliation:
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260.
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Abstract

The properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H2.4
Copyright
Copyright © Materials Research Society 2003

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