Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-05-14T14:56:19.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Time Decay Characteristics of the Yb3+- Related 0.98 μm Emissions in Porous Silicon

Published online by Cambridge University Press:  10 February 2011

Tadamasa Kimura ,
Yasuhiro Nishida ,
Tohru Dejima ,
Riichiro Saito  and
Hideo Isshiki
Tadamasa Kimura
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, t-kimura@ee.uec.ac.jp
Yasuhiro Nishida
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, t-kimura@ee.uec.ac.jp
Tohru Dejima
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, t-kimura@ee.uec.ac.jp
Riichiro Saito
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, t-kimura@ee.uec.ac.jp
Hideo Isshiki
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, t-kimura@ee.uec.ac.jp
Get access

Abstract

Enhanced emissions at 0.98 μm of Yb3+ ions (2F5/2 → 2F7/2) incorporated in porous silicon are obtained when the host porous silicon is pre-annealed in an O2 containing atmosphere. Time decay characteristics are measured for the Yb 3+-related 0.98 μm emissions as well as for the emissions of these host porous silicon between 20 K and 300 K. The decay of the Yb3+ peak at 20 K is characterized with a fast (˜ 30 μs) and a slow decay time (≤ ˜ 400 μs), whereas it is fitted with one slow decay time (˜ 390 μs) at 300 K. The results are explained in terms of two optical centers: one has a fast fluorescent lifetime with a large temperature quenching, and the other has a slow fluorescent lifetime which is nearly constant between 20 K and 300 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 293
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kimura, T., Yokoi, A., Horiguchi, H., Saito, R., Ikoma, T., and Sato, A., Appl. Phys. Lett.,65,983 (1994)Google Scholar
[2] Kimura, T., Yokoi, A., Nishida, Y., Saito, R., Yugo, S. and Ikoma, T., Appl. Phys. Lett.,67, 2687 (1995)Google Scholar
[3] Kimura, T., Nishida, Y., Yokoi, A. and Saito, Riichiro, to be published in J.Appl.Phys.(1998)Google Scholar
[4] Klein, P. B., Solid State Comm., 65,1097 (1988)Google Scholar
[5] Takahei, K., Taguchi, A., Nakagome, H., Uwai, K., and Whiteny, P.S., J. Appl. Phys. 66 4941(1989)Google Scholar
[6] Kimura, T., Isshiki, H., Ishida, H., Yugo, S., Saito, R. and Ikoma, T., J. Appl. Phys., 76, 3714 (1994)Google Scholar
[7] Taguchi, A., Nakagome, H., and Takahei, K., J. Appl. Phys. 70, 5604 (1991)Google Scholar
[8] Isshiki, H., Saito, R., Kimura, T. and Ikoma, T., J. Appl. Phys. 70, 6993 (1991)Google Scholar
[9] G. Franzó, Priolo, F., Coffa, S., Polman, A., and Carnera, A., Appl. Phys. Lett. 64, 2235 (1994)Google Scholar