Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-05-16T00:14:14.782Z Has data issue: false hasContentIssue false
  • English
  • Français

Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

Published online by Cambridge University Press:  01 February 2011

Hiroshi Uchida ,
Seiichiro Koda ,
Hirofumi Matsuda ,
Takashi Iijima ,
Takayuki Watanabe  and
Hiroshi Funakubo
Hiroshi Uchida
Affiliation:
Department of Chemistry, Faculty of Science and Engineering, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Seiichiro Koda
Affiliation:
Department of Chemistry, Faculty of Science and Engineering, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Hirofumi Matsuda
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1–1–1 Umezono, Tsukuba, 305–8568, Japan
Takashi Iijima
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1–1–1 Umezono, Tsukuba, 305–8568, Japan
Takayuki Watanabe
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226–8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226–8502, Japan
Get access

Abstract

Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.8
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cummins, S. E., and Cross, L. E., J. Appl. Phys. 39, 2268 (1968).Google Scholar
2. Wu, D., Li, A., Zhu, T., Li, Z., Liu, Z., and Ming, N., J. Mater. Res. 16. 1325 (2001).Google Scholar
3. Watanabe, T., Sakai, A., and Funakubo, H., J. Appl. Phys. 89, 3934 (2001).Google Scholar
4. Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Lee, J., and Jo, W., Nature 401, 682 (1999).Google Scholar
5. Kojima, T., Sakai, T., Watanabe, T., Funakubo, H., Saito, K., and Osada, M., Appl. Phys. Lett. 80, 2746 (2002).Google Scholar
6. Uchida, H., Yoshikawa, H., Okada, I., Matsuda, H., Iijima, T., Watanabe, T., and Funakubo, H., Jpn. J. Appl. Phys. 41, 6820 (2002).Google Scholar
7. Yamada, M., Iizawa, N., Yamaguchi, T., Sakamoto, W., Kikuta, K., Yogo, T., Hayashi, T., and Hirano, S., Jpn. J. Appl. Phys. 42, 5222 (2003).Google Scholar
8. Uchida, H., Yoshikawa, H., Okada, I., Matsuda, H., Iijima, T., Watanabe, T., Kojima, T., and Funakubo, H., Appl. Phys. Lett. 81, 2229 (2002).Google Scholar
9. Noguchi, Y., and Miyayama, M., Appl. Phys. Lett. 78, 1903 (2001).Google Scholar
10. Noguchi, Y., Miwa, I., Goshima, Y., and Miyayama, M., Jpn. J. Appl. Phys. 39, L1259 (2000).Google Scholar
11. Watanabe, T., Funakubo, H., Osada, M., Noguchi, Y., and Miyayama, M., Appl. Phys. Lett. 80, 100 (2002).Google Scholar
12. Uchida, H., Okada, I., Matsuda, H., Iijima, T., Watanabe, T., Kojima, T., and Funakubo, H., Jpn. J. Appl. Phys. submitted.Google Scholar
13. Sakai, T., Watanabe, T., Cho, Y., Mizuhira, K., and Funakubo, H., Jpn. J. Appl. Phys. 40, 6481 (2001).Google Scholar
14. Uchida, H., Yoshikawa, H., Okada, I., Matsuda, H., Iijima, T., Watanabe, T., and Funakubo, H., Mat. Res. Soc. Symp. Proc. 748, U12.1 (2003).Google Scholar
15. Warren, W. L., Tuttle, B. A., and Dimos, D., Appl. Phys. Lett. 67, 1426 (1995).Google Scholar
16. Park, P. H., Hyun, S. J., Bu, S. D., Noh, T. W., Lee, J., Kim, T. H., and Jo, W., Appl. Phys. Lett. 74, 1907 (1999).Google Scholar