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Titaniun Silicide Formation on Heavily Doped Arsenic-Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

S. L. Dowben ,
D. W. Marsh ,
G. A. Smith ,
N. Lewis ,
T. P. Chow  and
W. Katz
D. W. Marsh
Affiliation:
General Electric Corporate Research and Development, PO Box 8, Schenectady, NY 12301
G. A. Smith
Affiliation:
General Electric Corporate Research and Development, PO Box 8, Schenectady, NY 12301
N. Lewis
Affiliation:
General Electric Corporate Research and Development, PO Box 8, Schenectady, NY 12301
T. P. Chow
Affiliation:
General Electric Corporate Research and Development, PO Box 8, Schenectady, NY 12301
W. Katz
Affiliation:
General Electric Knolls Atomic Power Laboratory, Schenectady, NY
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Every new generation of metal/oxide/semiconductor (MOS) technology has achieved higher densities and switching speeds. In order to match these characteristics of MOS circuits, a metallization which has a low resistivity, has electrical and chemical stability, can withstand high-temperature processing and can be manufactured relatively easily and reliably is needed. These requirements make the refractory metals a suitable if not ideal choice [1,2]. However, there has been some question as to the reliability of processing during silicide formation when using refractory metals. When the metallization is used to form self-aligned silicide structures over heavily doped source and drain regions, it is crucial to understand the subsequent behavior of the dopant during the processing period. Whereas others have studied different aspects of dopant redistribution [3–8], we report in this paper a systematic study of the electrical, structural, and elemental properties of titanium silicide formation on arsenic implanted silicon as a function of implanted dose and processing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 355
Copyright
Copyright © Materials Research Society 1985

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References

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