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Transient Conductance Measurements And Heat-Flow Analysis of Pulsed-Laser-Induced Melting of Aluminum Thin Films

Published online by Cambridge University Press:  26 February 2011

J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
Michael O. Thompson
Affiliation:
Cornell University, Ithaca, NY 14853
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Abstract

We report time-resolved electrical-resistance measurements during pulsed-laser melting of a metal, aluminum. The resistances are correlated with the thresholds for partial and full melting. We describe a semianalytic solution, based on an impulse-response function, for the response, to a heating pulse, of a thin film of good thermal conductor supported by an infinite substrate. The results agree well with the resistance measurements, and confirm our interpretation of the data. In addition, time-resolved reflectance measurements establish that, in this geometry, melting and solidification proceed via the motion of a well-defined, planar liquid/solid interface, whose position can be deduced from the resistance measurements. These measurements permit the first real-time determinations of melt-depths and quenching histories during rapid-solidification processing of metals.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Mehrabian, R., ed., Rapid Solidification Processing: Principles and Technologies, III (National Bureau of Standards, Gaithersburg, 1982).Google Scholar
2. Galvin, G. J., Thompson, M. O., Mayer, J. W., Hammond, R. B., Paulter, N. and Peercy, P. S., Phys. Rev. Lett. 48, 33 (1982).CrossRefGoogle Scholar
3. Thompson, M. O., Liquid-Solid Interface Dynamics During Pulsed Laser Melting of Silicon-on-Sapphire, Ph.D Thesis (Cornell, 1984).Google Scholar
4. Auston, D. H., Surko, C. M., Venkatesan, T.N.C., Slusher, R. E. and Golovchenko, J.A., Appl. Phys. Lett. 33, 437 (1978).CrossRefGoogle Scholar
5. Tsao, J. Y., Picraux, S. T., Peercy, P. S. and Thompson, M. O., to be published in Appl. Phys. Lett.Google Scholar
6. Touloukian, Y. S., ed., Thermophysical Properties of High Temperature Solid Materials, Vol. 1: Elements (Macmillan, New York, 1967), pp. 715.Google Scholar
7. Cullis, A. G., Webber, H. C. and Bailey, P., J. Phys. E 12, 688 (1979).Google Scholar
8. Beadle, W. E., Tsai, J. C. C. and Plummer, R. D., Quick Reference Manual for Integrated Circuit Technology (Wiley, New York, 1985), pp. 19.Google Scholar
9. Armstrong, B. H., in The Physics of SiO and its Interfaces, edited by Pantelides, S. T. (Pergamon, New York, 178).Google Scholar
10. Cohen, M. and Mehrabian, R., in Ref. 1, pp. 127.Google Scholar