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Transient Diffusion and Gettering of Au and Cu to Cavities in Si

Published online by Cambridge University Press:  26 February 2011

J. Wong-Leung ,
J. S. Williams  and
E. Nygren
J. Wong-Leung
Affiliation:
Department of Electronic Materials Engineering, Research of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
E. Nygren
Affiliation:
Department of Electronic Materials Engineering, Research of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
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Abstract

This paper addresses the diffusion and gettering of Cu and Au to internal cavities in Si introduced by H-implantation. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy are the main analysis methods used. During annealing at temperatures and times typical of low temperature device processing conditions, we observe a transient gettering regime in which implanted Au and Cu segregate to cavities leaving metal concentrations in the Si lattice well below the solubility level. Longer times and/or higher temperatures are required for equilibrium to be reached. These results may have important implications for developing optimum gettering strategies during thermal processing of device structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 273
Copyright
Copyright © Materials Research Society 1995

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