The rise and decay of the photoconductivity σp of intrinsic and strongly p-type hydrogenated amorphous silicon (a-Si:H) samples was studied as a function of photocarrier generation rate G between 4.2K and 300K. In intrinsic samples the temperature regime T<60K of energy-loss hopping is clearly distinguishable from T>80K where thermal re-excitation of photocarriers is possible. For the p-type sample the temperature dividing the two regimes is near 170K. In intrinsic samples the rise of σp is faster when residual photocarriers exist from previous light exposures than when the samples are in the electronic dark equilibrium. This indicates that geminate recombination decreases with increasing photocarrier concentration. In the p-type sample we observe an up to 20 percent overshoot in the rise of σp before σp settles down to its steady state value. This overshoot increases with G. We interpret the overshoot as an interplay of two recombination channels with different time scales.