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Trends in Solute Segregation Behavior During Silicon Solidification

Published online by Cambridge University Press:  15 February 2011

Riccardo Reitanot ,
Patrick M. Smith  and
Michael J. Aziz
Riccardo Reitanot
Affiliation:
Division Of Applied Sciences, Harvard University, Cambridge Ma 02138.
Patrick M. Smith
Affiliation:
Division Of Applied Sciences, Harvard University, Cambridge Ma 02138.
Michael J. Aziz
Affiliation:
Division Of Applied Sciences, Harvard University, Cambridge Ma 02138.
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Abstract

At the high growth rates accessible during pulsed-laser induced melting and solidification and explosive crystallization, crystal growth kinetics are dominated not by equilibrium thermodynamics, but by the atomistic mechanisms by which crystallization proceeds. These Mechanisms can be probed by testing the predictions of solute trapping models based on various crystal/Melt interface structures against Measurements. We have measured the dependence of solute trapping of several group III, IV, and V elements in silicon on both interface orientation and crystallization speed. The Aperiodic Stepwise Growth Model of Goldman and Aziz accurately fits both the velocity and orientation dependence of the solute trapping observed in these systems. The success of the model implies a ledge structure for the crystal/Melt interface and a step-flow mechanism for crystal growth. In addition, we have observed an empirical inverse correlation between the two free parameters (“diffusive speeds”) in this model and the equilibrium solute partition coefficient of a system. This correlation may be used to estimate values of the diffusive speeds for other systems in which solute trapping has not been or cannot be Measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 479
Copyright
Copyright © Materials Research Society 1994

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References

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