Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-05-31T11:59:40.459Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultra-Thin Sputtered Pzt Films for Ulsi Drams

Published online by Cambridge University Press:  21 February 2011

Jiyoung Kim ,
C. Sudhama ,
Rajesh Khamankar  and
Jack Lee
Jiyoung Kim
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
C. Sudhama
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
Rajesh Khamankar
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
Jack Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712
Get access

Abstract

In this work, a high-temperature deposition technique has been developed for ultra-thin sputtered PZT films for ULSI DRAM (<256Mb) storage capacitor applications. In contrast to the previously developed low-temperature (200°C) deposition, deposition at high-temperature (400°C) yields a desirable reduction in grain size of the perovskite phase. The thickness of PZT films has been reduced to less than 30nm with high charge storage density (∼30μC/cm2) and low leakage current density. An optimized 65nm PZT thin film was found to have an equivalent SiO2 thickness of 1.9Å and a leakage current density of less than 10−6 A/cm2 under 2V operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 473
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ahn, J. H. et al. , Tech. Dig. VLSI. Tech. Symp., p.12, 1992 Google Scholar
2. Fazan, P. C. et al. , IEDM Tech. Dig., p. 263, 1992 Google Scholar
3. Chikarmane, V. et al. , J. Electron. Mater., 21(5), p. 503, 1992 Google Scholar
4. Sudhama, C. et al. , J. Electron. Mater., to be publishedGoogle Scholar
5. RT66A Ferroelectric Tester Operation Manual, Version 2.0, Radiant Technologies, Albuquerque, New MexicoGoogle Scholar
6. Chikarmane, V. et al. , Mat. Res. Soc. Symp. Proc., 243, p. 367, 1992 CrossRefGoogle Scholar
7. Kugimiya, K. et al. , Mat. Res. Soc. Symp. Proc., 243, p. 179, 1992 CrossRefGoogle Scholar
8. Myers, S. A. et al. , Mat. Res. Soc. Symp. Proc., 200, p. 231, 1990 CrossRefGoogle Scholar
9. Chen, K. C. et al. , Mat. Res. Soc. Symp. Proc., 73, p. 731, 1986 CrossRefGoogle Scholar
10. Kumar, C. V. R. Vassant et al. , J. Appl. Phys., 71, p. 864, 1992 Google Scholar
11. Chikarmane, V. et al. , Mat. Res. Soc. Symp. Proc., 230, p. 297, 1992 Google Scholar
12. Moazzami, R. et al. , IEDM Tech. Dig., p. 973, 1992 Google Scholar
13. Fujii, E. et al. , IEDM Tech. Dig., p.267,1992 Google Scholar
14. Lee, J. et al. , Integrated Ferroelectrics, to be publishedGoogle Scholar
15. Sudhama, C. et al. , J. Vac. Sci. Technol., to be publishedGoogle Scholar