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Vacancy Diffusion at Polysilicon Encapsulated GaAs Surfaces

Published online by Cambridge University Press:  26 February 2011

K. L. Kavanagh ,
C. W. Magee  and
J. Sheets
K. L. Kavanagh
Affiliation:
Dept. Materials Science, Cornell University, Ithaca, NY 14853
C. W. Magee
Affiliation:
RCA, David Sarnoff Laboratories, Princeton, NJ 08540
J. Sheets
Affiliation:
Adv. Semiconductor Materials, 3005 48th St. Tempe, AR 85282
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Abstract

The diffusivity of Si and P in GaAs encapsulated with heavily-doped polysilicon (poly-Si) is correlated to the flux of Ga and As diffusing from the substrate into the encapsulant. A model based on the diffusion of vacancies into the GaAs is proposed and used to simulate the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 463
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Kavanagh, K. L., Mayer, J. W., Magee, C. W., Sheets, J., Tong, J. and Woodall, J., Appl. Phys. Lett. 47, 1208 (1985).Google Scholar
2.Kavanagh, K. L., Magee, C. W. and Mayer, J. W., Mat. Res. Sym. Proc., 77, 785 (1987).Google Scholar
3.Greiner, M. E., PhD. Dissertation, Stanford University, June, 1984 or J. Appl. Phys. 57, 5181 (1985).Google Scholar
4.Kavanagh, K. L., Magee, C. W., Can J. Phys. in press.Google Scholar
5.Arnold, N., Schmitt, R., Heime, K., J. Phys. D. Appl. Phys. 17, 443 (1984).Google Scholar
6.Tatsuta, S., Inata, T., Okamura, S., Muto, S., Hiyamizu, S., Umebu, I., Materials Research Symp. Proc., 37, 23 (1985).Google Scholar
7.Chiang, S. Y., Pearson, G. L., J. Appl. Phys. 46, 2986 (1975)Google Scholar