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Vacancy-Type Defects in Electron and Proton Irradiated II-VI Compounds

Published online by Cambridge University Press:  10 February 2011

S. Brunner ,
W. Puff ,
P. Mascher  and
A.G. Balogh
S. Brunner
Affiliation:
Institut fur Technische Physik, Technische Universitat Graz, A-8010 Graz, Austria, wp@ifk.tu-graz.ac.at
W. Puff
Affiliation:
Institut fur Technische Physik, Technische Universitat Graz, A-8010 Graz, Austria, wp@ifk.tu-graz.ac.at
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
A.G. Balogh
Affiliation:
Department of Materials Science, Technische Hochschule Darmstadt, Darmstadt, Germany
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Abstract

In this contribution we present a study aimed at comparing results of positron-lifetime and Doppler-broadening measurements on the wide-band-gap compound semiconductors ZnS, ZnSe, and ZnTe. To investigate the basic properties of intrinsic and radiation induced defects the samples were irradiated either with 3 MeV protons or 1 MeV electrons. The isochronal annealing was performed in an Ar atmosphere. It was found that electron and proton irradiation cause different changes in the positron annihilation characteristics. Several annealing stages were observed, related to the annealing of variously sized vacancy complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 437
Copyright
Copyright © Materials Research Society 1998

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