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Vacancy-Type Defects in Proton-Bombarded InP

Published online by Cambridge University Press:  26 February 2011

C. Ascheron ,
R. Krause ,
A. Polity ,
H. Sobotta  and
V. Riede
C. Ascheron
Affiliation:
University of Leipzig, Departments of Nuclear Physics and of Semiconductors. Physics, Linnéstr. 5, 0–7010 Leipzig, Federal Republic of Germany
R. Krause
Affiliation:
Martin Lather University Halle, Department of Physics, Friedemamt-Bach-Platz 6, 0–4020 Halle, Federal Republic of Germany
A. Polity
Affiliation:
Martin Lather University Halle, Department of Physics, Friedemamt-Bach-Platz 6, 0–4020 Halle, Federal Republic of Germany
H. Sobotta
Affiliation:
University of Leipzig, Departments of Nuclear Physics and of Semiconductors. Physics, Linnéstr. 5, 0–7010 Leipzig, Federal Republic of Germany
V. Riede
Affiliation:
University of Leipzig, Departments of Nuclear Physics and of Semiconductors. Physics, Linnéstr. 5, 0–7010 Leipzig, Federal Republic of Germany
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Abstract

In proton-bombarded InP single crystals the fluence-dependent production of vacancy-type radiation defects and their annealing behaviour are studied. The results are interpreted using measurements of the total defect concentration, the carrier concentration and the infrared absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1127
Copyright
Copyright © Materials Research Society 1992

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References

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