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Vacuum Ultraviolet Laser Ablation of Teflon (PTFE)

Published online by Cambridge University Press:  01 January 1992

Peter R. Herman ,
Boyi Chen  and
David J. Moore
Peter R. Herman
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S-1A4
Boyi Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S-1A4
David J. Moore
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S-1A4
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Abstract

Vacuum-ultraviolet laser ablation of Teflon is reviewed. The 157 nm irradiation of Teflon produces clean ablation sites well suited to micromachining applications in the electronics and medical fields. At 193 nm, etching profiles are poorly defined, showing swelling characteristics commonly produced by longer wavelength lasers. Comprehensive new 193 nm ablation data are presented showing the first evidence of incubation effects for Teflon. A computer model was developed to include ablation, swelling and incubation processes. The computer results satisfactorily model the experimental data over a large fluence range of 0.6 to 13 J/cm2 with three adjustable parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 163
Copyright
Copyright © Materials Research Society 1993

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References

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