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Very Thin 2D GaAs Films on Si During the Early Stages of Growth by MBE

Published online by Cambridge University Press:  25 February 2011

D.B. Fenner ,
D.K. Biegelsen ,
B.S. Krusor ,
F.A. Ponce  and
J.C. Tramontana
D.B. Fenner
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304 Physics Department, Santa Clara University, Santa Clara, CA 95053
D.K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
B.S. Krusor
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
F.A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J.C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

GaAs samples deposited on Si by molecular beam epitaxy (MBE) with a graded thickness of 0–3 nm initially show the presence of a metastable two dimensional (2D) layer containing Ga and As. In the thicker regions of the wedge samples, islands (3D topography) form in the presence of the 2D sea, i.e., Stranski – Krastanov growth. Compositional profiles of these wedges were made with in situ Auger electron spectroscopy (AES) which has allowed the identification of at least four regimes of growth. Lattice images from cross – sectional transmission electron microscopy (XTEM) are consistent with the AES profiles. Substrate temperature during deposition of the films has a strong effect on film topography, as does the beam – flux ratio on film stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 15
Copyright
Copyright © Materials Research Society 1990

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References

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