Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-21T18:32:58.361Z Has data issue: false hasContentIssue false
  • English
  • Français

Visible Light Emitting Diode Employing Electrochemically Anodized Nanocrystalline Silicon Thin Film

Published online by Cambridge University Press:  15 February 2011

T. Toyama ,
T. Yamamoto ,
T. Matsui  and
H. Okamoto
T. Toyama
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
T. Yamamoto
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
T. Matsui
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
H. Okamoto
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Get access

Abstract

Visible electroluminescence (EL) has been achieved on the entirely solid state thin film light emitting diode (TFLED) employing electrochemically anodized nanocrystalline Si (nc-Si) as a light emitting active layer. The TFLED consisting of p-type nc-Si, and intrinsic and n-type amorphous layers was fabricated on a SnO2-coated glass substrate. The nc-Si was formed in HF aqueous solution from boron doped microcrystalline Si (μc-Si) deposited by rf plasma chemical vapor deposition (CVD). The TFLED exhibits clear rectification with a forward threshold voltage of about 1.5 V, whereas visible EL emission is observed upon applying reverse bias voltages. The diode ideality factor is more than 2, and the light output increases with the square of the diode current. The EL emission color is orange-red and the spectral peak energy is 1.8 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 675
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. as recent studies, Microcrystalline and Nanocrystalline Semiconductors, edited by Collins, R.W., Tsai, C.C., Hirose, M., Koch, F. and Brus, L. (Mater. Res. Soc. Proc. 358, Pittsburgh, PA, 1995).Google Scholar
2.Canham, L.T., Phys. Stat. Sol. (b) 190, 9 (1995) and references there in.Google Scholar
3.Richter, A., Steiner, P., Kozlowski, F., and Lang, W., IEEE Elect. Device Lett. 12, 691 ( 1991 ).Google Scholar
4.Chen, Z., Bosman, G., and Ochoa, R., Appl. Phys. Lett. 62, 708 (1993).Google Scholar
5.Steiner, P., Kozlowski, F., Wielunski, M., and Lang, W., Jpn. J. Appl. Phys. 33, 6075 ( 1994).Google Scholar
6.Linnros, J. and Lalic, N., Appl. Phys. Lett. 66, 3048 (1995).Google Scholar
7.Bustarret, E., Ligeon, M., Bruyère, J. C., Muller, F., Hèrino, R., Gaspard, F., Ortega, L., and Stutzmann, M., Appl. Phys. Lett. 61, 1552 (1992).Google Scholar
8.Kalkhoran, N.M., Namavar, F., and Maruska, H.P., J. SID, 3/1, 3 (1995).Google Scholar
9.Kanicki, J., Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices (Artech House, London, 1991) Vol. 1.Google Scholar
10.Toyama, T., Matsui, T., Kurokawa, Y., Okamoto, H., and Hamakawa, Y., Appl. Phys. Lett. 69, 1261 (1996).Google Scholar
11.Hamakawa, Y., Kruangam, D., Toyama, T., Yoshimi, M., Paasche, S.M., and Okamoto, H., Optoelectron. Devices and Technol. 4, 281 (1989).Google Scholar
12.Iqbal, Z. and Veprek, S., J. Phys. C 15, 377 (1982).Google Scholar
13.Bustarret, E., Ligeon, M., and Rosenbauer, M., Phys. Stat. Sol. (b) 190, 111 (1995).Google Scholar
14.Wehrspohn, R.B., Chazalviel, J.-N., Ozanam, F., and Solomon, I., Phys. Rev. Lett. 77, 1885 (1996).Google Scholar
15.Hattori, K., Mori, T., Okamoto, H., and Hamakawa, Y., Phys. Rev. Lett. 60, 825 (1988).Google Scholar
16.Miyazaki, S., Ihara, Y., and Hirose, M., Phys. Rev. Lett. 59, 125 (1987).Google Scholar
17.Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).Google Scholar
18.Namavar, F., Maruska, H.P., and Kalkhoran, N.M., Appl. Phys. Lett. 60, 2514 (1992).Google Scholar
19.Maruska, H.P., Namavar, F., and Kalkhoran, N.M., Appl. Phys. Lett. 61, 1338 (1992).Google Scholar