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Voc Saturation Effect in High-temperature Hydrogenated Polycrystalline Silicon Thin-film Solar Cells

Published online by Cambridge University Press:  20 June 2011

Hidayat Hidayat ,
Per I. Widenborg  and
Armin G. Aberle
Hidayat Hidayat*
Affiliation:
Electrical and Computer Engineering, National University of Singapore, Singapore Solar Energy Research Institute of Singapore, National University of Singapore, Singapore
Per I. Widenborg
Affiliation:
Electrical and Computer Engineering, National University of Singapore, Singapore Solar Energy Research Institute of Singapore, National University of Singapore, Singapore
Armin G. Aberle
Affiliation:
Electrical and Computer Engineering, National University of Singapore, Singapore Solar Energy Research Institute of Singapore, National University of Singapore, Singapore
*
*Electronic mail: hidayat@nus.edu.sg
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Abstract

Hydrogenation of polycrystalline silicon thin-film solar cells is performed to improve the one-sun open-circuit voltage (Voc) of the device. Voc is found to increase linearly with increasing hydrogenation temperature and then saturates. For planar and textured samples, the Voc saturates at about 340 ºC and 307 ºC respectively. The low hydrogenation temperature helps to lower thermal budget during industrial process. Arrhenius plot of Voc prior to the saturation shows that the textured samples have lower activation energies than the planar sample. The activation energies of samples 188 (planar), 788 (textured) and 888 (textured) are 1.31 eV, 0.86 eV and 0.92 eV, respectively. The lower activation energies of the textured samples could be due to the shorter diffusion thickness and the increased surface area that is exposed to the hydrogen plasma.

Keywords

passivationphotovoltaicSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a05-01
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Green, M., Emery, K., Hishikawa, Y. and Warta, W., Progress in Photovoltaics: Research and Applications 18 (2), 144–150 (2010).10.1002/pip.974Google Scholar
2. Nickel, N., Semiconductors and Semimetals 61, 86–88 (1999).Google Scholar
3. Nickel, N., Jackson, W. and Walker, J., Physical Review B 53 (12), 7750 (1996).10.1103/PhysRevB.53.7750Google Scholar
4. Terry, M., Straub, A., Inns, D., Song, D. and Aberle, A., Applied Physics Letters 86, 172108 (2005).10.1063/1.1921352Google Scholar
5. Gorka, B., Rau, B., Lee, K., Dogan, P., Fenske, F., Conrad, E., Gall, S. and Rech, B., in 22nd European Photovoltaic Solar Energy Conference (Milan, Italy).Google Scholar
6. Sinton, R. and Cuevas, A., Applied Physics Letters 69, 2510 (1996).10.1063/1.117723Google Scholar
7. Widenborg, P. and Aberle, A., Advances in OptoElectronics 7 (2007).Google Scholar
8. Nickel, N., Johnson, N. and Jackson, W., Applied Physics Letters 62 (25), 3285–3287 (2009).10.1063/1.109101Google Scholar
9. Nickel, N., Semiconductors and Semimetals 61, 123 (1999).Google Scholar
10. Nickel, N., Anderson, G. and Walker, J., Solid State Communications 99 (6), 427–431 (1996).10.1016/0038-1098(96)00283-9Google Scholar
11. Keevers, M., Young, T., Schubert, U. and Green, M., (unpublished).Google Scholar