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XPS Studies at the Interface of Ti/AIN Ceramic

Published online by Cambridge University Press:  15 February 2011

Dian Hong Shen
Affiliation:
The State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
Changlin Bao
Affiliation:
The State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
Hua Lu
Affiliation:
The State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
Zhangda Lin
Affiliation:
The State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
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Abstract

The photoelectron spectra for titanium deposition on a AIN ceramic substrate at room temperature have been measured. Before deposition, the binding energies of Ols and Al 2p show that the substrate contained oxygen as a major impurity and a top layer of degeneration was formed. After deposition of a small amount of titanium, it was found that the Nls separated into two peaks(396.5 eV and 402 eV) and Ti 2p corresponded to the oxide state. With an increase of titanium coverage, the Ti 2p peak shifted toward a lower energy. The peak at 402 eV dominated at a titanium coverage of 0.9 nm, showing the nitrogen-oxygen binding character. For a titanium coverage of 3.0 nm, a new peak at 406 eV was formed. These results suggest that during deposition of Ti onto the AIN substrate which has a top hydrated alumina layer, some of nitrogen atoms tend to be bound with oxygen and to form an interfacial oxynitride layer between the metallic titanium and substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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