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X-Ray Fluorescence Determination of Low Metal Concentration in Surface Masking Layers on Organic Polymers

Published online by Cambridge University Press:  25 February 2011

Richard S. Hutton  and
Gary N. Taylor
Richard S. Hutton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Gary N. Taylor
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

A highly sensitive x-ray fluorescence (XRF) technique has been developed for the determination of low metal concentrations in the etch resistant layer of surface-imaged photoresists. The samples may be analyzed quickly and the method is applicable to a wide variety of surfaceimaging processes. For each metal of interest the XRF spectrometer is easily calibrated using polymer films containing known concentrations of a metal-containing reagent. Examples of the application of this technique to the analysis of Ti, Si and Zr-containing films are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 265
Copyright
Copyright © Materials Research Society 1992

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References

1. Taylor, G. N., Stillwagon, L. E. and Venkatesan, T. N. R., J. Electrochem. Soc., 131, 1659 (1984).Google Scholar
2. Taylor, G. N., Nalamasu, O. and Hutton, R. S., Polymer News, 15, 268 (1990).Google Scholar
3. Coopmans, F. and Roland, B., Solid State Technol., 30 (6), 93 (1987).Google Scholar
4. Stillwagon, L. E., Komblit, A. and Taylor, G. N., J. Vac. Sci. Technol., B, 6, 2229 (1988).CrossRefGoogle Scholar
5. Taylor, G. N., Stillwagon, L. E., Baiocchi, F. A. and Vasile, M. J., Microcircuit Eng., 6, 381 (1987).Google Scholar
6. Hutton, R. S., Schilling, M. L., Katz, H. E., Taylor, G. N. and Putvinski, T. M., unpublished results.Google Scholar
7. Baik, K. H., hove, L. Van den, Goethals, A. M. and Beeck, M. Op de, J. Vac. Sci. Technol. B, 8, 1481 (1990).CrossRefGoogle Scholar
8. Visser, R. J., Schellekens, J. P. W., Reuhman-Huisken, M. E. and ljzendoom, L. J. Van, Proc. SPIE, 771, 111 (1987).Google Scholar
9. Taylor, G. N. in Microelectronic Materials and Processes, Levy, R. A., Ed., Kluwer Academic Publishers, Dordrecht, 1989, p 369 ff.Google Scholar
10. Calabrese, G. S., Abali, L. N., Bohland, J. F., Pavelchek, E. K., Bobbio, S. M. and Smith, P., Proc. SPIE, 1466, 528 (1991).CrossRefGoogle Scholar