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X-Ray Line Broadening Analysis of Ybacuo Superconducting Thin Films

Published online by Cambridge University Press:  28 February 2011

M. Ece ,
R.W. Vook  and
John P. Allen
M. Ece
Affiliation:
Syracuse University,Physics Department, Syracuse NY 13244‐1130.,
R.W. Vook
Affiliation:
Syracuse University,Physics Department, Syracuse NY 13244‐1130.,
John P. Allen
Affiliation:
CVC Products Inc., Rochester NY 14603‐1886.
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Abstract

Thin films of YBaCuO were prepared on MgO and SrTi03/Al2 03 substrates by rf magnetron sputtering. The SrTi03 was deposited onto AI2O3 by flash evaporation. The as‐deposited films on both substrates had an (001) orientation and were superconductors. Annealing the films in O2 improved their crystal 1inity and raised their critical temperatures (Tc). A detailed X‐ray diffraction study of the YBaCuO films was carried out. Values for the particle sizes and nonuniform strains along the c axis were obtained from broadened diffraction lines by using an integral breadth method. It was found that the broadening was mainly caused by nonuniform strain. It was also observed that nonuniform strain decreased as the films were annealed at various temperatures. The Tc's of the films were very sensitive to changes in nonuniform strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 659
Copyright
Copyright © Materials Research Society 1990

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References

1 Muller, Egon K., Nicholson, Basil J. and Turner, Gerard L.E., Journal of Electrochemical Society, 110, (9) 969, (1963).Google Scholar
2 Ece, M. and Vook, R.W., Appl.Phys.Lett., 54,(26) 2722,(1989).Google Scholar
3 Cheung, C.T. and Ruckenstein, E., J. Mater .Res. , 4, (1),(1989).Google Scholar
4 Rachinger, W.A, J.Sci. Inst., 25, 254 (1948).Google Scholar
5 Klug, H. and Alexander, L., X‐Rav Diffraction Procedures, John Wiley and Sons, London (1954).Google Scholar