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X-ray scattering studies of low-T Ag(001) and Cu(001) homoepitaxy: Vacancy trapping and surface morphology evolution

Published online by Cambridge University Press:  11 February 2011

Cristian E. Botez
Affiliation:
Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, MO 65211, U.S.A. Department of Physics and Astronomy, State University of New York, Stony Brook, NY 11794, U.S.A.
Kaile Li
Affiliation:
Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, MO 65211, U.S.A.
Erdong D. Lu
Affiliation:
Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, MO 65211, U.S.A.
Paul F. Miceli
Affiliation:
Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, MO 65211, U.S.A.
Edward H. Conrad
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332–0430
Peter W. Stephens
Affiliation:
Department of Physics and Astronomy, State University of New York, Stony Brook, NY 11794, U.S.A.
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Abstract

We have used synchrotron x-ray diffraction to study the low-T homoepitaxial growth on Ag(001) and Cu(001) surfaces. For both systems, we found that a large, temperature-dependent vacancy concentration is incorporated in films grown below 160K. The vacancy trapping occurs concomitantly with substantial changes in the surface morphology, where a non-monotonic temperature dependence of the mean-square surface roughness has been previously observed. For Cu/Cu(001) we also found that the concentration of vacancies incorporated at 110K evolves, upon heating, according to the vacancy annealing behavior well-known from radiation damage studies of bulk copper and it is consistent with the activation energy for vacancy mobility.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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