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Zn Doped Nanocrystalline CuCl Thin Films for Optoelectronic Applications

Published online by Cambridge University Press:  01 February 2011

Rajani K.Vijayaraghavan ,
F Olabanji Lucas ,
Md. Monjarul Alam ,
Stephen Daniels  and
Patrick J. McNally
Rajani K.Vijayaraghavan
Affiliation:
rajani00kv@gmail.com, Dublin City University, School of Electronic Engineering, Dublin-9, Ireland
F Olabanji Lucas
Affiliation:
olalucas@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Dublin-9, Ireland
Md. Monjarul Alam
Affiliation:
milon112000@gmail.com, Dublin City University, School of Electronic Engineering, Dublin, Ireland
Stephen Daniels
Affiliation:
daniels@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Dublin-9, Ireland
Patrick J. McNally
Affiliation:
mcnallyp@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Dublin-9, Ireland
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Abstract

We report on the use of Zn as an n-type dopant in CuCl thin films for optoelectronic applications, wherein maximum n-type doping of the order of 1018 cm -3 has been achieved. Zn doped nanocrystalline CuCl thin films are successfully deposited on glass and Si substrates by pulsed dc magnetron sputtering. Structural and morphological properties are investigated using X-ray diffraction (XRD) studies and Scanning Electron Microscopy (SEM), respectively. The conductivity of the CuCl:Zn films is examined using the four point probe technique. An order of magnitude increase in the conductivity of CuCl, by the doping with Zn is reported herein. The doped CuCl films display strong room temperature cathodoluminescence (CL) at λ˜ 385nm, which is similar to that of the undoped films. Hall Effect measurements show an n-type conductivity of the doped films.

Keywords

semiconductingdopantsputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1260: Symposium T – Photovoltaics and Optoelectronics from Nanoparticles , 2010 , 1260-T10-07
Copyright
Copyright © Materials Research Society 2010

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