Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-24T18:52:20.154Z Has data issue: false hasContentIssue false

ZnO Nanowire/p-GaN Heterojunction LEDs

Published online by Cambridge University Press:  01 February 2011

Heiko O. Jacobs
Affiliation:
hjacobs@umn.edu, University of Minnesota, Electrical and Computer Engineering, 200 Union St. SE, Minneapolis, MN, 55455, United States
Jesse Cole
Affiliation:
cole0474@umn.edu, University of Minnesota, Department of Electrical and Computer Engineering, 200 Union Street SE, Minneapolis, MN, 55455, United States
Amir M. Dabiran
Affiliation:
dabiran@svta.com, SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN, 55344, United States
Heiko O. Jacobs
Affiliation:
hjacobs@umn.edu, University of Minnesota, Department of Electrical and Computer Engineering, 200 Union Street SE, Minneapolis, MN, 55455, United States
Get access

Abstract

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of the current-voltage characteristics and electroluminescence spectra is presented to determine the transport mechanism and location of electron hole recombination. Reverse bias transport and luminescence are attributed to hot-hole injection from the ZnO nanowires into the GaN film through tunneling breakdown. Forward bias transport and luminescence are attributed to hole injection from the GaN into the ZnO and recombination at defect states inside the ZnO yielding distinct color variations between individual wires. Major resistive losses occurred in the GaN lateral thin film connecting to the vertical ZnO nanowires.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vispute, R. D., Talyansky, V., Choopun, S., Sharma, R. P., Venkatesan, T., He, M., Tang, X., Halpern, J. B., Spencer, M. G., Li, Y. X., Salamanca-Riba, L. G., Iliadis, A. A., and Jones, K. A., Applied Physics Letters, vol. 73, pp. 348350, 1998.Google Scholar
2. Alivov, Y. I., Nostrand, J. E. Van, Look, D. C., Chukichev, M. V., and Ataev, B. M., Applied Physics Letters, vol. 83, pp. 29432945, 2003.Google Scholar
3. Alivov, Y. I., Kalinina, E. V., Cherenkov, A. E., Look, D. C., Ataev, B. M., Omaev, A. K., Chukichev, M. V., and Bagnall, D. M., Applied Physics Letters, vol. 83, pp. 47194721, 2003.Google Scholar
4. Osinsky, A., Dong, J. W., Kauser, M. Z., Hertog, B., Dabiran, A. M., Chow, P. P., Pearton, S. J., Lopatiuk, O., and Chernyak, L., Applied Physics Letters, vol. 85, pp. 42724274, 2004.Google Scholar
5. Wang, M. W., McCaldin, J. O., Swenberg, J. F., McGill, T. C., and Hauenstein, R. J., Applied Physics Letters, vol. 66, pp. 1974–6, 1995.Google Scholar
6. Park, W. I. and Yi, G.-C., Advanced Materials (Weinheim, Germany), vol. 16, pp. 8790, 2004.Google Scholar
7. Jeong, M.-C., Oh, B.-Y., Ham, M.-H., and Myoung, J.-M., Applied Physics Letters, vol. 88, pp. 202105/1–202105/3, 2006.Google Scholar
8. Greene, L. E., Law, M., Tan, D. H., Montano, M., Goldberger, J., Somorjai, G., and Yang, P., Nano Letters, vol. 5, pp. 12311236, 2005.Google Scholar
9. Zu, P., Tang, Z. K., Wong, G. K. L., Kawasaki, M., Ohtomo, A., Koinuma, H., and Segawa, Y., Solid State Communications, vol. 103, pp. 459463, 1997.Google Scholar
10. Khan, M. A., Chen, Q., Skogman, R. A., and Kuznia, J. N., Applied Physics Letters, vol. 66, pp. 2046–7, 1995.Google Scholar
11. Bhan, R. K. and Gopal, V., Semiconductor Science and Technology, vol. 9, pp. 289–97, 1994.Google Scholar
12. Starikov, D., Berichev, I., Medelci, N., Kim, E., Wang, Y., and Bensaoula, A., AIP Conference Proceedings, vol. 420, pp. 648653, 1998.Google Scholar