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Low Temperature Dielectronic Recombination Coefficients for Ions of C, N and O

Published online by Cambridge University Press:  18 September 2017

H. Nussbaumer
Affiliation:
Institute of Astronomy, ETH Zentrum, CH 8092 Zurich, Switzerland
P.J. Storey
Affiliation:
Department of Physics & Astronomy, University College London, Gower Street, London WC1E 6BT, UK

Extract

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Dielectronic recombination coefficients have been calculated for some ions of C, N and O by Storey (1981, Mon. Not. R. astr. Soc., 195, 27P). Using the same approach, we have extended those calculations to all other ions of C, N and O for which a dielectronic contribution to the total recombination coefficient might be expected at nebular temperatures. Recombination coefficients have been calculated in the temperature range from 5000 K up to the temperature at which the Burgess general formula becomes valid. The total dielectronic recombination coefficients are fitted to a simple function of the electron temperature.

Type
Abstracts of Contributed Papers
Copyright
Copyright © Reidel 1983