Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-28T16:01:51.581Z Has data issue: false hasContentIssue false

Characteristics ofPt/PbZr0.52Ti0.48O3/Pt andAu/PbZr0.52Ti0.48O3/YBa2Cu3O7−δcapacitors after γ-ray irradiation

Published online by Cambridge University Press:  15 September 1999

J. Gao
Affiliation:
Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, P.R. China State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China
L. Zheng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China
Z. Song
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China
C. Lin
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China
D. Zhu
Affiliation:
Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, P.R. China
Get access

Abstract

PbZr0.52Ti0.48O3 (PZT) and YBa2Cu3O7−δ (YBCO) thin films were fabricated by a pulsed laser deposition (PLD) method. The Pt/PZT/Pt ferroelectric capacitors were fabricated on silicon substrates while the Au/PZT/YBCO capacitors were fabricated on LaAlO3 substrates. The capacitance-voltage (C-V) properties and the hysteresis loops of the capacitors were measured before and after γ-ray irradiation. The results show that for Pt/PZT/Pt capacitors, the remanent polarization Pr and the absolute coercive field EC increase while the dielectric constant ε decrease with increasing accumulated dose. For the Au/PZT/YBCO capacitors, Pr and ε decreased with accumulated dose, but the absolute value of the negative and positive coercive fields increased. The results have been interpreted by radiation-induced positive charge trapping at defects in the ferroelectric materials.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Moore, R.A., Benedetto, J., Rod, B.J., IEEE Trans. Nucl. Sci. 40, 1591 (1993). CrossRef
Benedetto, J., Delancey, W.M., Oldham, T.R., IEEE Trans. Nucl. Sci. 38, 1410 (1991). CrossRef
Coïc, Y.M., Musseau, O., Leray, J.L., IEEE Trans. Nucl. Sci. 41, 495 (1994). CrossRef
Benedetto, J., Moore, R.A., Mclean, F.B., IEEE Trans. Nucl. Sci. 37, 1713 (1990). CrossRef
Moore, R.A., Benedetto, J., IEEE Trans. Nucl. Sci. 42, 1575 (1995). CrossRef
Schwank, J.R., Nasby, R.D., Miller, S.L., IEEE Trans. Nucl. Sci. 37, 1703 (1990). CrossRef
J. Luo, Q. Li, D.B. Fenner, in Ferroelectric Thin Films IV, Research Society Symposium proceedings, edited by B.A. Tuttle et al., Vol. 361, p. 539 (1994).
Zhu, Aijun, Ma, Kun, Xiong, Xuming, J. Crys. Growth 178, 479 (1997). CrossRef
Ma Kun, Li Chun-ling, Cui Da-fa, Chin. Phys. Lett. 13, 775 (1996).
Scott, J.F., Araujo, G.A., J. Appl. Phys. 66, 1444 (1989). CrossRef
F. Jona, G. Shirane, in Ferroelectric Crystals (Pergamon Press Inc., 1962), pp. 42, 186, 295.
Zhongyang, Cheng, Liangying, Zhang, Xi, Yao, IEEE trans. Electr. Insul. 27, 773 (1992). CrossRef
Lee, J., Johnson, L., Safari, A., Appl. Phys. Lett. 63, 27 (1993). CrossRef
Lee, J., Esayan, S., Safari, A., Appl. Phys. Lett. 65, 254 (1994). CrossRef
Eom, C.B., van Dover, R.B., Philips, J.M., Appl. Phys. Lett. 63, 2570 (1993). CrossRef
Smyth, D.M., FEs 116, 117 (1991).
Yoo, I.K., Desu, S.B., Phys. Stat. Sol. (a) 133, 565 (1992). CrossRef
Baitu, T., Waster, R., Härdtl, K., J. Am. Ceram. Soc. 73, 1663 (1990). CrossRef
Scott, J.F., Araujo, C.A., Melnick, B.M., J. Appl. Phys. 70, 382 (1991). CrossRef
Mihara, T., Watanabe, H., Arujo, C.A., J. Appl. Phys. 33, 3996 (1994). CrossRef
Reitze, D.H., Haton, E., Ramesh, R., Appl. Phys. Lett. 63, 596 (1993). CrossRef
Hwang, D.M., Ramesh, R., Chen, C.Y., J. Appl. Phys. 68, 1772 (1990). CrossRef
Ramesh, R., Gilchrist, H., Sands, T., Appl. Phys. Lett. 63, 3592 (1993). CrossRef
Ramesh, R., Chen, W.K., Wilkens, B., Appl. Phys. Lett. 61, 1537 (1992). CrossRef