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Effect of Cu on InSe/Si(111) heterojunctions

Published online by Cambridge University Press:  15 September 1999

B. Abidri ,
J.-P. Lacharme ,
M. Ghamnia ,
C. A. Sébenne  and
M. Zerrouki
B. Abidri
Affiliation:
Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France
J.-P. Lacharme
Affiliation:
Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France
M. Ghamnia
Affiliation:
Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France
C. A. Sébenne
Affiliation:
Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France
M. Zerrouki
Affiliation:
Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France
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Abstract

The effect of sequential deposition of Cu onto a 300 Å-thick film of layered InSe epitaxially grown onto a Si(111) substrate, has been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and photoemission yield spectroscopy (PYS). Cu coverages were from a few hundredth of a monolayer (in terms of InSe atomic surface plane: 1 ML = 7.2 × 1014 at/cm2, that is 0.85 Å of Cu-metal) to 300 ML. The effect of annealings up to 370 °C was also studied. It is shown that Cu has first a non uniform bulk interaction with InSe which looks like an insertion which saturates at 1 ML of Cu per In2Se2 single layer. Then it forms islands which fully mask the surface beyond about 150 ML coverage (130 Å of Cu-metal). Upon annealings beyond 300 °C, the Si substrate behaves as a Cu sink.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 2 , September 1999 , pp. 153 - 158
Copyright
© EDP Sciences, 1999

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