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Non-contact C-V measurements of ultra thin dielectrics

  • P. Edelman (a1), A. Savtchouk (a1), M. Wilson (a1), J. D'Amico (a1), J. N. Kochey (a1), D. Marinskiy (a1) and J. Lagowski (a1)...

In this paper, we present a non-contact C-V technique for ultra-thin dielectrics on silicon. The technique uses incremental corona charging of dielectric and a measurement of the surface potential with a vibrating capacitive electrode. A differential quasistatic C-V curve is generated using time-resolved measurements. The technique incorporates transconductance corrections that enable corresponding ultra-low electrical oxide thickness (EOT) determination down to the sub-nanometer range. It also provides a means for monitoring the flat band voltage, V FB , the interface trap spectrum, D IT , and the total dielectric charge, Q TOT . This technique is seen as a replacement for not only MOS C-V measurements but also for mercury-probe C-V. In addition, EOT measurement by the corona C-V has a major advantage over optical thickness methods because it is not affected by water adsorption and molecular airborne contamination, MAC. These effects have been a problem for optical metrology of ultra-thin dielectrics.

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[1] P. Edelman, J. Lagowski, A. Savtchouk, M. Wilson, A. Aleynikov, D. Marinsky, J. Navarro, Mat. Sci. Eng. B 91–92, 211 (2002)
[2] Brown, A. E., Semicond. Int. 25, 55 (2002)
[3] M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrzebski, J. D'Amico, in Gate Dielectric Integrity: Material, Process and Tool Qualification, edited by D. C. Gupta, G. A. Brown (ASTM STP1382, West Conshohocken, 1999), p. 74
[4] P. Edelman, A. Savtchouk, M. Wilson, J. D'Amico, J. N. Kochey, D. Marinsky, J. Lagowski, in Characterization and metrology for ULSI technology: 2003 International Conference on Characterization and Metrology for ULSI Technology, edited by D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, S. Zollner, R. P. Khosla, E. M. Secula (AIP Conference Proceedings 683, 2003), p. 160
[5] J. Lagowski, M. Wilson, A. Savtchouk, US Patent 6, 538, 462 B1 (2003)
[6] Ahmad, K. et al., IEEE Trans. El. Devices 47, 1349 (2000)
[7] Clerc, R., De Salvo, B., Ghibaudo, G., Reimbold, G., Pananakakis, G., Solid-State Electron. 46, 407 (2002)
[8] M. Wilson, J. Lagowski, L. Jastrzebski, A. Savtchouk, V. Faifer, in Characterization And Metrology For ULSI Technology, edited by D. G. Seiler, A. C. Diebold, R. McDonald, W. M. Bullis, P. J. Smith, E. M. Secula (AIP Conference Proceedings 550, 2001), p. 220
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The European Physical Journal - Applied Physics
  • ISSN: 1286-0042
  • EISSN: 1286-0050
  • URL: /core/journals/the-european-physical-journal-applied-physics
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