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Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping

Published online by Cambridge University Press:  15 July 2004

P. J. Wellmann ,
A. Albrecht ,
U. Künecke ,
B. Birkmann ,
G. Mueller  and
M. Jurisch
P. J. Wellmann*
Affiliation:
Institute for Materials Science 6, University of Erlangen, Martensstr.7, D-91058 Erlangen, Germany
A. Albrecht
Affiliation:
Institute for Materials Science 6, University of Erlangen, Martensstr.7, D-91058 Erlangen, Germany
U. Künecke
Affiliation:
Institute for Materials Science 6, University of Erlangen, Martensstr.7, D-91058 Erlangen, Germany
B. Birkmann
Affiliation:
Crystal Growth Laboratory, Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Schottkystr. 10, D-91058 Erlangen, Germany
G. Mueller
Affiliation:
Institute for Materials Science 6, University of Erlangen, Martensstr.7, D-91058 Erlangen, Germany Crystal Growth Laboratory, Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Schottkystr. 10, D-91058 Erlangen, Germany
M. Jurisch
Affiliation:
Freiberger Compound Materials GmbH, Am Junger Löwe Schacht 5, D-09599 Freiberg, Germany
*
peter.wellmann@ww.uni-erlangen.de
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Abstract

We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots were determined in the charge carrier concentration range of 3 × 1017 m−3... 1 × 1018 cm−3 (range of trust up to 3 × 1018  cm−3) which is technically relevant for applications of GaAs wafers as substrate for laser and light emitting diodes. The error of the optical technique is in the range of 10% ... 15% and is comparable to electrical Hall measurements. The sensitivity of the setup, i.e. smallest detectable variation of doping (and hence charge carrier) concentration, is less than 1% in an area of 5 × 5 mm2 and about 20% across the 3 inch area. Absorption mappings of the charge carrier and hence doping homogeneity are presented for n-type GaAs:Si and GaAs:Te.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 357 - 361
Copyright
© EDP Sciences, 2004

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References

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