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Selective plasma etching treatment of the screen-printed carbon nanotube cold cathode

Published online by Cambridge University Press:  30 April 2013

Jun Yu
Jun Yu*
Affiliation:
Hubei Province Key Laboratory of Refractories and Ceramics, Wuhan University of Science and Technology, Wuhan 430081, P.R. China
*
ae-mail: yjwust@163.com
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Abstract

A high-precision printing and patterning carbon nanotube (CNT) cathode was prepared using the screen-printing method. Selective plasma etchings were introduced to improve field emission properties of the CNT cathode through the reactive ion etching (RIE) system. The field emission characteristics and mechanism of the cathode after etching treatment were studied. It was found that the reactive ion etching could effectively expose plentiful CNTs inside the cathode and protrude them from the surface. Moreover, with the increase of RIE operation pressure, CNT cathode field emission behavior changed from metal-insulation medium-vacuum (MIV) to a classical metallic-microprotrusion (MM) structure field emission model. The results showed that only the cathode with appropriate RIE operation pressure etching has a low operation field and a high emission current density.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 2 , May 2013 , 20102
Copyright
© EDP Sciences, 2013

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References

Wang, Q.H., Setlur, A.A., Lauerhaas, J.M., Dai, J.Y., Seelig, E.W., Chang, R.P.H., Appl. Phys. Lett. 72, 2912 (1998)CrossRef
Talin, A.A., Dean, K.A., Jaskie, J.E., Solid-State Electron. 45, 963 (2001)CrossRef
Bonard, J.M., Kind, H., Stockli, T., Nilsson, L.O., Solid-State Electron. 45, 893 (2001)CrossRef
Robertson, J., Carbon 37, 759 (1999)CrossRef
Suzuki, M., Kusunoki, T., Sagawa, M., Tsuji, K., IEEE Trans. Electron Devices 49, 1005 (2002)CrossRef
Guo, P.S., Chen, T., Chen, Y.W., Zhang, Z.J., Feng, T., Wang, L.L., Lin, L.F., Sun, Z., Zheng, Z.H., Solid-State Electron. 52, 877 (2008)CrossRef
Akihiko, H., Tetsuya, S., Kunihiko, N., Fumio, A., Zhiying, S., Shuhei, N., Soichiro, O., J. Vac. Sci. Technol. B 24, 1423 (2006)
Chung, D.S., Park, S.H., Lee, H.W., Choi, J.H., Cha, S.N., Kim, J.W., Jang, J.E., Min, K.W., Cho, S.H., Yoon, M.J., Lee, J.S., Lee, C.K., Yoo, J.H., Kim, J.M., Jung, J.E., Jin, Y.W., Park, Y.J., You, J.B., Appl. Phys. Lett. 80, 4045 (2002)CrossRef
Choi, J.H., Zoulkarneev, A.R., Jin, Y.W., Park, Y.J., Chung, D.S., Song, B.K., Han, I.T., Lee, H.W., Park, S.H., Kang, H.S., Kim, H.J., Kim, J.W., Jung, J.E., Kimb, J.M., Baek, H.G., Yu, S.G., Appl. Phys. Lett. 84, 1022 (2004)CrossRef
Kyung, S.J., Park, J.B., Park, B.J., Min, K.S., Lee, J.H., Yeom, G.Y., Appl. Phys. 101, 083305 (2007)CrossRef
Nilsson, L., Groening, O., Emmenegger, C., Kuettel, O., Schaller, E., Schlapbach, L., Kind, H., Bonard, J.-M., Kern, K., Appl. Phys. Lett. 76, 2071 (2000)CrossRef
Luo, Z.X., Ph.D. Thesis, Texas Tech University, (1994)
Xia, C.M., Ph.D. Thesis, Carnegie Mellon University, (2001)
Allen, N.K., Latham, R.V., J. Phys. D: Appl. Phys. 11, 55 (1978)CrossRef
Xu, N.S., in High Voltage Vacuum Insulation: Basic Concepts, Technological Practice, edited by Latham, R.V., 1st edn. (Academic Press, London, 1995)Google Scholar
Fowler, R.H., Nordheim, L.W., Proc. Royal Soc. Math. Phys. Eng. Sci. 119, 173 (1928)CrossRef