Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-17T07:21:32.614Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of indium phosphide wafers treated by long time annealing at high temperatures

Published online by Cambridge University Press:  15 July 2004

K. Zdansky ,
L. Pekarek  and
P. Hlidek
K. Zdansky*
Affiliation:
Institute of Radio Engineering and Electronics, ASCR, Chaberska 57, 18251 Prague 8, Czech Republic
L. Pekarek
Affiliation:
Institute of Physics, ASCR, Na Slovance 2, 18221 Prague 8, Czech Republic
P. Hlidek
Affiliation:
Charles University, Institute of Physics, Ke Karlovu 5, 12116 Prague 2, Czech Republic
*
zdansky@ure.cas.cz
Get access

Abstract

High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950 °C and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 197 - 200
Copyright
© EDP Sciences, 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Hofman, D., Muller, G., Streckfuss, N., Appl. Phys. A 48, 315 (1989) CrossRef
T. Wolf, D. Bimberg, G. Hirt, D. Hofman, G. Muller, 4th Int. Conf. on InP (Newport, RI, USA 1992) (NY, IEEE 1992), p. 630
G. Hirt, D. Wolf, G. Muller, 8th Conf. on Semi-Insulating III-V Materials, Warsaw, Poland, 1994, p. 19
Wolf, D., Hirt, G., Muller, G., J. Electron Mater. 24, 93 (1995) CrossRef
Brozel, M. R., Foulkes, E. J., Tuck, B., Phys. Stat. Sol. A 72, K159 (1982) CrossRef
Skolnick, M. S., Foulkes, E. J., Tuck, B., J. Appl. Phys. 55, 2951 (1984) CrossRef
Fornari, R., Brinciotti, A., Gombia, E., Mosca, R., Sentiri, A., Mater. Sci. Eng. B 28, 95 (1994) CrossRef
Zach, F. X., J. Appl. Phys. 75, 7894 (1994) CrossRef
Zach, F. X., Haller, E. E., Gabbe, D., Iseler, G., Bryant, G. G., Bliss, D. F., J. Electron Mater. 25, 331 (1995) CrossRef
Darwich, R., Pajot, B., Rose, B., Robein, D., Theys, B., Rahbi, R., Porte, C., Gendron, F., Phys. Rev. B 48, 17776 (1993) CrossRef
Ewels, C. P., Oberg, S., Jones, R., Pajot, B., Briddon, P. R., Semicond. Sci. Technol. 11, 502 (1996) CrossRef
Firm: CMK s.r.o., address: Sandricka 30, Zarnovica, Slovakia
Peng, L. H., Broekaert, T., Choi, W. Y., Fonstad, C., Jones, V., Appl. Phys. Lett. 59, 564 (1991) CrossRef
B. Clerjaud, D. Cote, C. Naud, M. Gauneau, R. Chaplain, Appl. Phys. Lett. 59, 2980 (1991)
Zhao, Y. W., Xu, X. L., Gong, M., Fung, S., Beling, C. D., Chen, X. D. et al., Appl. Phys. Lett. 72, 2126 (1998) CrossRef
Alt, H. C., Treicher, R., Appl. Phys. Lett. 59, 3651 (1991) CrossRef
Thonke, K., Pressel, K., Phys. Rev. B 44, 13418 (1991) CrossRef