Article contents
Thermoelectric properties and mobility activation energy of amorphous As20Se80−xTlx films
Published online by Cambridge University Press: 22 February 2007
Abstract
Thermal evaporation technique was used to prepare
As20Se80−xTlx films from bulk materials;
($5\leqslant x\leqslant 35$ at.%). The effect of TI addition on the thermoelectric
properties and mobility activation energy of As-Se-Tl chalcogenide
semiconductors has been studied in the homogeneous glass-forming region
through temperature range (300–380 K). The thermoelectric power, TEP had a
positive sign over the whole temperature range investigated, indicating
p-type conductivity for As20Se80−xTlx films. TEP activation
energy, $\Delta E_{s}$
could be calculated from TEP measurements. It was
found that $\Delta E_{s}$
decreases with increasing Tl-content and is
found to vary between 0.814 and 0.517 eV. The mobility activation
energy, $\Delta E_{Q}$
could be calculated.
- Type
- Research Article
- Information
- Copyright
- © EDP Sciences, 2007
References
- 8
- Cited by