Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-20T17:50:11.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa

Published online by Cambridge University Press:  15 July 2004

V. V. Shchennikov ,
S. V. Gudina ,
A. Misiuk ,
S. N. Shamin  and
S. V. Ovsyannikov
V. V. Shchennikov*
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
S. V. Gudina
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
A. Misiuk
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland
S. N. Shamin
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
S. V. Ovsyannikov
Affiliation:
Institute of Metal Physics, Ural Division of RAS, GSP-170, Yekaterinburg, 620219, Russia
*
vladimir.v@imp.uran.ru
Get access

Abstract

The thermoelectric power of silicon micro-samples grown by Czochralski method (Cz-Si) and annealed at 450 °C has been investigated at enhanced pressure up to 16 GPa. The correlation has been established between the thermoelectric power and pressure of the semiconductor-metal phase transition, on the one hand, and mechanical properties (microhardness, compressibility), on the other, for Cz-Si with different content of oxygen. Possible application of the studied properties for micro-device technology is discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 145 - 148
Copyright
© EDP Sciences, 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Antonova, I. V. et al., Physica B 225, 251 (1996) CrossRef
Emtsev Jr, V. V.. et al., Phys. Stat. Sol. B 235, 75 (2003) CrossRef
Emtsev, V. V., Oganesyan, G. A., Schmalz, K., Semiconductors 27, 856 (1993)
G. Wiech, E. Zöpf, in Band Structure Spectroscopy of Metals and Alloys, edited by D. J. Fabian, L. M. Watson, (Academic Press, London, 1973)
Minomura, S., Drickamer, H. D., J. Phys. Chem. Solids 23, 451 (1962) CrossRef
Bundy, F. P., J. Chem. Phys. 41, 3809 (1964) CrossRef
Olijnyk, H., Sikka, S. K., Holzapfel, W. B., Phys. Lett. 103A, 137 (1984) CrossRef
Jing Zhu, Hu et al., Phys. Rev. B 34, 4679 (1986)
McMahon, M. I. et al., Phys. Rev. B 50, 739 (1994) CrossRef
Mignot, J. M., Chouteau, G., Martinez, G., Physica B 135, 235 (1985) CrossRef
Biswas, R., Kertesz, M., Phys. Rev. B 29, 1791 (1984) CrossRef
Gilev, S. D., Trubachev, A. M., Phys. Stat. Sol. B 211, 379 (1999) 3.0.CO;2-4>CrossRef
Shchennikov, V. V., Fiz. Metallov Metalloved. 67, 93 (1989)
You-Xiang Zhao, et al., Solid State Commun. 59, 679 (1986) CrossRef
Khvostantsev, L. G., Vereshchagin, L. F., Uliyanitskaya, N. M., High Temp. High. Pressures 5, 261 (1973)
Polvani, D. A. et al., Rev. Sci. Instrum. 70, 3586 (1999) CrossRef
Sakai, N., Takemura, K., Tsuji, K., J. Phys. Soc. Jap. 51, 1811 (1982) CrossRef
Tsidil'kovskii, I. M., Shchennikov, V. V., Glusman, N. G., Fiz. i Tech. Poluprovo. 17, 958 (1983)
V. V. Shchennikov, A. Yu. Derevskov, V. I. Osotov, in XXXVII EHPRG Meeting, (1999) (Montpellier, France, 1999), Abstract Book, p. N P1–06
Weber, L., Lehr, M., Gmelin, E., Phys. Rev. B 46, 9511 (1992) CrossRef
Shchennikov, V. V., Bazhenov, A. V., Rev. High Pres. Sci. Tech. 6, 657 (1997)
V. V. Shchennikov, A. Yu. Derevskov, in High Pressure Chemical Engineering, edited by R. von Rohr, Ch. Trepp (Elsevier Publ. Co., Amsterdam/New York, 1996), p. 604
Kurmaev, E. Z. et al., Phys. Scr. 41, 288 (1992) CrossRef
Shimomura, O. et al., Philos. Mag. 29, 547 (1974) CrossRef
Yu. S. Boyarskaya, D. Z. Grabko, M. S. Kats, Physics of microindentation processes (Shtiintsa Kishinev, 1986)
Eremenko, V. G., Nikitenko, V. I., Phys. Stat. Sol. A 14, 317 (1972) CrossRef
Gridneva, I. V., Milman, Yu. V., Trefilov, V. I., Phys. Stat. Sol. A 14, 177 (1972) CrossRef
Young Joo Lee, J. von Boehm, R. M. Nieminen, Appl. Phys. Lett. 79, 1453 (2001)
Pesola, M. et al., Phys. Rev. Lett. 84, 5343 (2000) CrossRef
V. V. Sobolev, V. V. Nemoshkalenko, The calculation methods in solid state theory (Naukova Dumka, Kiev, 1988)
Wang, C. S., Klein, B. M., Phys. Rev. B 24, 3393 (1981) CrossRef