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Transmission electron microscopy of NdNiO3 thin films on silicon substrates

Published online by Cambridge University Press:  15 October 2000

P. Laffez ,
R. Retoux ,
P. Boullay ,
M. Zaghrioui ,
P. Lacorre  and
G. van Tendeloo
P. Laffez*
Affiliation:
Laboratoire de Physique de l'État Condensé (UMR CNRS 6087), Université du Maine, 72085 Le Mans Cedex 9, France
R. Retoux
Affiliation:
Laboratoire des Fluorures (UMR 6010), Université du Maine, 72085 Le Mans Cedex 9, France
P. Boullay
Affiliation:
EMAT, University of Antwerp, groeonenborgerlaan 171, Antwerp 2020, Belgium
M. Zaghrioui
Affiliation:
Laboratoire de Physique de l'État Condensé (UMR CNRS 6087), Université du Maine, 72085 Le Mans Cedex 9, France
P. Lacorre
Affiliation:
Laboratoire des Fluorures (UMR 6010), Université du Maine, 72085 Le Mans Cedex 9, France
G. van Tendeloo
Affiliation:
EMAT, University of Antwerp, groeonenborgerlaan 171, Antwerp 2020, Belgium
*
patrick.laffez@univ-lemans.fr
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Abstract

The microstructure of NdNiO3 thin films deposited on Si (100) has been investigated by high resolution electron microscopy. Deposition at 250 °C and 600 °C and several annealing at high temperature under oxygen pressure were performed. Depending on the deposition temperature and annealing conditions, different texture and microstructure were observed. Relationships between microstructure and transport properties are discussed. The differences of grain boundaries are suggested to be responsible for the difference in transport properties of the films.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 12 , Issue 1 , October 2000 , pp. 55 - 60
Copyright
© EDP Sciences, 2000

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