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Properties of Low Residual Stress Silicon Oxynitrides Used as a Sacrificial Layer

Published online by Cambridge University Press:  10 February 2011

S. Habermehl ,
A. K. Glenzinski ,
W. M. Halliburton  and
J. J. Sniegowski
S. Habermehl
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, sdhaber@sandia.gov
A. K. Glenzinski
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, sdhaber@sandia.gov
W. M. Halliburton
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, sdhaber@sandia.gov
J. J. Sniegowski
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, sdhaber@sandia.gov
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Abstract

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO2) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO2 and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO2 sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 605: Symposium MM – Materials Science of Microelectromechanical Systems Devices II , 1999 , 49
Copyright
Copyright © Materials Research Society 2000

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