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National Technology Policy in Global Markets: Developing Next-Generation Lithography in the Semiconductor Industry

Published online by Cambridge University Press:  20 January 2017

Greg Linden ,
David C. Mowery  and
Rosemarie Ham Ziedonis
Greg Linden*
Affiliation:
University of California at Berkeley
David C. Mowery*
Affiliation:
University of California at Berkeley
Rosemarie Ham Ziedonis*
Affiliation:
University of Pennsylvania
*
Department of Economics, University of California, Berkeley, CA, USA. E-mail: glinden@uclink4.berkeley.edu
School of Business, University of California, Berkeley, USA. E-mail: mowery@haas.berkeley.edu
The Wharton School, University of Pennsylvania, USA. E-mail: ziedonisr@wharton.upenn.ued
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Abstract

Since the late 1980s, the Cooperative Research and Development Agreement (CRADA) has been a prominent vehicle used to support collaboration between US federal laboratories and private firms. This paper examines the structure and goals of one of the most ambitious CRADAs conducted to date, the EUV CRADA, which involves three Department of Energy laboratories and leading US firms in the semiconductor industry and is aimed at the development of next-generation lithographic technologies. This large project is an important case study in ‘post-Cold-War’ technology policy and government-industry collaboration. Although the EUV project represents significant improvements in the design and management of CRADAs, it also illustrates the inherent difficulties of balancing political and economic goals in complex technology development programs.

Type
Research Article
Information
Business and Politics , Volume 2 , Issue 2 , August 2000 , pp. 93 - 113
Copyright
Copyright © V.K. Aggarwal 2000 and published under exclusive license to Cambridge University Press 

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