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Electrical properties of the La0.8Sr0.2MnO3 thin films on SrTiO3 substrate by an excimer laser metal organic deposition (ELMOD) process at low temperature

Published online by Cambridge University Press:  17 March 2011

T. Tsuchiya*
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, Higashi Tsukuba, 305-8565, Japan
T. Yoshitake
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
Y. Shimakawa
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
I. Yamaguchi
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
T. Manabe
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
T. Kumagai
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
Y. Kubo
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
S. Mizuta
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
*
Corresponding author; TEL +81-298-61-4553; FAX+81-298-61-4714; E-mail; tetsuo-tsuchiya@aist.go.jp
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Abstract

The electrical properties of epitaxial La0.8Sr0.2MnO3 films on a SrTiO3(STO) substrate prepared by changing the laser fluence, the irradiation time and the film thickness using excimer laser metal organic deposition(ELMOD) at 500/cm2, the film showed a 3.9 % maximum temperature coefficient of resistance (TCR: defined as 1/R•dR/dT) which was obtained by the ArF laser irradiation at 80mJ/cm2 for 10min. At a constant fluence of 80mJ/cm2, the Tm (temperature of the maximum TCR) of the La0.8Sr0.2MnO3 films increased from 225K to near 250K with an increase in the irradiation time to 90min at which the TCR was almost 3.9%. The La0.8Sr0.2MnO3 film that showed the maximum TCR of 4.0% at 275K was obtained by the ELMOD process at 500°C using the optimum conditions (Flence:80mJ/cm2, Irradiation time: 90min, Film thickness: 80nm).

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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