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Evaluation of the Chemical-mechanical Planarization (CMP) Performance of Silicon Nitride and Silicon Carbide as Hard Mask Materials for Cu-based Interconnect Technology

Published online by Cambridge University Press:  01 February 2011

Wei-Tsu Tseng ,
Jia Lee ,
Sanjit Das ,
John Fitzsimmons ,
Glenn Biery ,
Edward Barth  and
Ronald Goldblatt
Wei-Tsu Tseng
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
Jia Lee
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
Sanjit Das
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
John Fitzsimmons
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
Glenn Biery
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
Edward Barth
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
Ronald Goldblatt
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA
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Abstract

Hydrogenated silicon nitride, hydrogenated silicon carbide, and their intermediates were chemo-mechanically polished. Results showed that, within the material set examined, harder materials also have higher CMP removal rates. In addition, CMP rates for multilayer stacks did not follow those for single layers. Polish mechanisms were proposed to explain these phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 732: Symposium I – Chemical-Mechanical Planarization , 2002 , I1.7
Copyright
Copyright © Materials Research Society 2002

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