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Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs

Published online by Cambridge University Press:  01 February 2011

Jesse S. Jur ,
Ginger D. Wheeler ,
Matthew T. Veety ,
Daniel J. Lichtenwalner ,
Douglas W. Barlage  and
Mark A. L. Johnson
Jesse S. Jur
Affiliation:
jsjur@ncsu.edu, North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States, 919-515-6174, 919-515-3027
Ginger D. Wheeler
Affiliation:
vdwheele@ncsu.edu, North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States
Matthew T. Veety
Affiliation:
mtveety@ncsu.edu, North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695, United States
Daniel J. Lichtenwalner
Affiliation:
djlichte@ncsu.edu, North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States
Douglas W. Barlage
Affiliation:
dwbarlag@ncsu.edu, North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695, United States
Mark A. L. Johnson
Affiliation:
majohns2@ncsu.edu, North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States
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Abstract

High-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSFET devices (ns > 4×1013 cm−2) offer significant performance advantages, such as greater efficiency and scalability, as compared to heterojunction field effect transistor (HFET) devices for use in high power and high frequency GaN-based devices. High leakage current and current collapse at high drive conditions suggests that the use of a high-κ insulating layer is principle for enhancement-mode MOSFET development. In this work, rare earth oxides (Sc, La, etc.) are explored due to their ideal combination of permittivity and high band gap energy. However, a substantial lattice mismatch (9-21%) between the rare earth oxides and the GaN substrate results in mid-gap defect state densities and growth dislocations. The epitaxial growth of the rare earth oxides by molecular beam epitaxy (MBE) on native oxide passivated-GaN is examined in an effort to minimize these growth related defects and other growth-related limitations. Growth of the oxide on GaN is characterized analytically by RHEED, XRD, and XPS. Preliminary MOS electrical analysis of a 50 Å La2O3 on GaN shows superior leakage performance as compared to significantly thicker Si3N4 dielectric.

Keywords

III-Vepitaxyoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C08-02
Copyright
Copyright © Materials Research Society 2008

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References

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