Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T05:09:56.410Z Has data issue: false hasContentIssue false
  • English
  • Français

Dual-probe scanning tunneling microscope and a carbon nanotube ring transistor

Published online by Cambridge University Press:  11 February 2011

Taishi Shigematsu ,
Hiroyuki Watanabe ,
Chikara Manabe ,
Kei Shimotani  and
Masaaki Shimizu
Taishi Shigematsu
Affiliation:
Ecology Research Laboratory, Corporate Research Laboratory, Fuji Xerox Co., Ltd., 1600, Takematsu, Minamiashigara-shi, Kanagawa-ken, 250–0111, JAPAN
Hiroyuki Watanabe
Affiliation:
Ecology Research Laboratory, Corporate Research Laboratory, Fuji Xerox Co., Ltd., 1600, Takematsu, Minamiashigara-shi, Kanagawa-ken, 250–0111, JAPAN
Chikara Manabe
Affiliation:
Ecology Research Laboratory, Corporate Research Laboratory, Fuji Xerox Co., Ltd., 1600, Takematsu, Minamiashigara-shi, Kanagawa-ken, 250–0111, JAPAN
Kei Shimotani
Affiliation:
Ecology Research Laboratory, Corporate Research Laboratory, Fuji Xerox Co., Ltd., 1600, Takematsu, Minamiashigara-shi, Kanagawa-ken, 250–0111, JAPAN
Masaaki Shimizu
Affiliation:
Ecology Research Laboratory, Corporate Research Laboratory, Fuji Xerox Co., Ltd., 1600, Takematsu, Minamiashigara-shi, Kanagawa-ken, 250–0111, JAPAN
Get access

Abstract

For measuring molecular device, we developed a dual-probe scanning tunneling microscope (D-STM) composed of two STM systems in which a carbon nanotube (NT) was used for STM tip. Using D-STM, we fabricated a NT ring device. The NT ring device showed a switching behavior with applying gate bias. Furthermore, in STM imaging for various gate biases, we could observe directly hole injection into the NT ring.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 761: Symposia B/C/D/F/G/NN – Molecular Electronics , 2002 , NN8.2/G14.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Aviram, A., and Ratner, M. A., Chem. Phys. Lett. 29, 277 (1974).Google Scholar
2. Martel, R., Shea, R. S., and Avouris, P., J. Phys. Chem. B. 103, 7551 (1999).Google Scholar
3. Dai, H., Hafner, J. H., Rinzler, A. G., Colbert, D. T., and Smalley, R. E., Nature 384, 147 (1996).Google Scholar
4. Nishijima, H. et al., Appl. Phys. Lett. 74, 4061 (1999).Google Scholar
5. Watanabe, H., Manabe, C., Shigematsu, T., Shomotani, K., and Shimizu, M., Appl. Phys. Lett. 79, 2462 (2001).Google Scholar
6. Kane, E. O., J. Phys. Chem. Solids 1, 249 (1957).Google Scholar
7. Yu, P.Y. and Cardona, M., Fundamentals of Semiconductors. (Springer-Verlag Berlin Heidelberg 1996).Google Scholar