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High Definition Mesa Growth by Silicon MBE

Published online by Cambridge University Press:  22 February 2011

E. Hammerl ,
F. Wittmann ,
J. Messarosch ,
I. Eisele ,
V. Huber  and
H. Oppolzer
E. Hammerl
Affiliation:
Institut für Physik, Fakultät für Elektrotechnik Universtität der Bundeswehr München, 8014 Neubiberg
F. Wittmann
Affiliation:
Institut für Physik, Fakultät für Elektrotechnik Universtität der Bundeswehr München, 8014 Neubiberg
J. Messarosch
Affiliation:
Institut für Physik, Fakultät für Elektrotechnik Universtität der Bundeswehr München, 8014 Neubiberg
I. Eisele
Affiliation:
Institut für Physik, Fakultät für Elektrotechnik Universtität der Bundeswehr München, 8014 Neubiberg
V. Huber
Affiliation:
Institut für Physik, Fakultät für Elektrotechnik Universtität der Bundeswehr München, 8014 Neubiberg
H. Oppolzer
Affiliation:
Institut für Physik, Fakultät für Elektrotechnik Universtität der Bundeswehr München, 8014 Neubiberg
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Abstract

A novel epitaxial growth method for fabricating mesa patterns on a micrometer scale has been investigated. Electrical devices have been prepared employing this technique and their characteristics are in good agreement with those of mesa etched devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 27
Copyright
Copyright © Materials Research Society 1991

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References

[1] Ota, Y., Thin Solid Films 106, 3 (1983)Google Scholar
[2] Bean, J. C., Rozgonyi, G. A., Appl. Phys. Lett. 41, 752 (1982)Google Scholar
[3] Henderson, R. C.: J. Electrochem. Soc. 119, 772 (1972)CrossRefGoogle Scholar
[4] Herzog, H. -J., Kasper, E.: J. Electrochem. Soc. 132, 2227 (1985)Google Scholar
[5] Cerva, H. (private communication)Google Scholar
[6] Streit, D. C., Metzger, R. A., Allen, F. G., Appl. Phys. Lett. 44, 234 (1984)CrossRefGoogle Scholar
[7] Kesel, G., Harrmerschmitt, J., Lange, E., Signalverarbeitende Dioden, (Springer-Verlag, Berlin, 1982)Google Scholar
[8] Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981)Google Scholar
[9] Malik, R. J. et al., Electronics Letters 16, 836 (1980)Google Scholar