Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-25T02:12:38.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability and Nanostrucure of Heterogeneous Amorphous Silicon Thin-Film Synthesized Under High Chamber Pressure (500 To 2200 Mtorr) Regime of Rf Pecvda

Published online by Cambridge University Press:  17 March 2011

A. R. Middya ,
S. Hamma ,
S. Hazra ,
S. Ray  and
C. Longeaud
A. R. Middya
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, Cedex, FRANCE Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta - 70 032, INDIA
S. Hamma
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, Cedex, FRANCE
S. Hazra
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta - 70 032, INDIA
S. Ray
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta - 70 032, INDIA
C. Longeaud
Affiliation:
Laboratoire de Genie Electrique de Paris (CNRS, URA 0127), Ecole Superieure d'Electricite, Universites Paris VI et Paris XI, Plateau de Moulon 91192 Gif-Sur-Yvette, Cedex, FRANCE
Get access

Abstract

We report on improvement in stability of a new type of amorphous silicon films, synthesized (growth rate > 0.1 nm/s) by driving the plasma condition close to the powder regime (or “γ-regime”) of rf PECVD. These films exhibit high mobility-lifetime products [(μτ)annld ∼ 10−4 cm2/V, σph/σd ∼ 5-10×105, Ea ≍ 0.7 - 0.9 eV ], compact network structure [CH ≍ 7 to 8 at%, nanovoid density < 0.01 %, ρ ≍ 2.23 ± 0.01 gm/cm3], new features of optical properties and density-of-state (DOS) above EF is significantly lower than that of state-of-the art films. The kinetics of light-induced (AM 1.5) degradation of μτ is very fast and saturated μτ ∼ 10−6cm2/V, a value similar to that of conventional a-Si:H films at annealed state. The improved stability of “new” a-Si films, henceforth it will be denoted as “quasi-amorphous silicon (qm-Si) thin- film”, will be correlated with its specific nanostructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A9.5
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsu, D. V., Chao, B. S., Ovshinsky, S. R., Guha, S. and Yang, J., Appl. Phys. Lett. 71 (1997) 1317.Google Scholar
2. Koh, J., Lee, Y., Fujiwara, H., Wronski, C. R. and Collins, R. W., Appl. Phys. Lett. 73 (1998) 1526.Google Scholar
3. Zhao, Y., Kong, G., Pan, G., Liao, X., Phys. Rev. Lett. 74 (1995) 558.Google Scholar
4. Ray, S., Hazra, S., Middya, A. R. and Barua, A. K., Conf. Record. 1st World PVSC conference, (Hawaii, 1994) 551.Google Scholar
5. Middya, A. R., Hazra, S., Ray, S., Longeaud, C. and Kleider, J. P., Mat. Res. Soc. Symp. Proc. 467 (1997) 615.Google Scholar
6. Hazra, S., Middya, A. R., Longeaud, C. and Ray, S., Appl. Phys. Letts. 76 (2000) 2340.10.1063/1.126339Google Scholar
8. Perrin, J., Plasma Deposition of Amorphous-based Materials edited by Bruno, G., Capezzuto, P. and Madan, A. (Academic Press, 1995) p. 216; J. Perrin, J. Non-Cryst. Solids 137 & 138 (1991) 639.Google Scholar
9. Cabarrocas, P. Roca i, Hamma, S., Sharma, S. N., Viera, G., Bertran, E. and Costa, J., J. Non-Cryst. Solids 227–230 (1998) 871.Google Scholar
10. French, I. D., Deane, S. C., Murley, D. T., Hewett, J., Gale, I. G. and Powell, M. J., Mat. Res. Soc. Symp. Proc. 467 (1997) 875.Google Scholar
11. Ferlaut, A. S. Koh, o. J., Rovira, P. I., Wronski, C. R. and Collins, R. W., Mat. Res. Soc. Symp. Proc. 557 (1999) 579.Google Scholar
12. Williamson, D. L., Mat. Res. Soc. Symp. Proc. 377 (1995) 251, D. L. Williamson, Mat. Res. Soc. Symp. Proc. 557 (1999) 251.10.1557/PROC-377-251Google Scholar