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Nanoindentation of multilayer PZT/Pt/SiO2 thin film systems on silicon wafers for MEMS applications.

Published online by Cambridge University Press:  01 February 2011

C. Chima-Okereke ,
M. J. Reece ,
A. J. Bushby ,
R. W. Whatmore  and
Q. Zhang
C. Chima-Okereke
Affiliation:
Queen Mary, University of London, England, UK.
M. J. Reece
Affiliation:
Queen Mary, University of London, England, UK.
A. J. Bushby
Affiliation:
Queen Mary, University of London, England, UK.
R. W. Whatmore
Affiliation:
Cranfield University, Cranfield, UK.
Q. Zhang
Affiliation:
Cranfield University, Cranfield, UK.
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Abstract

Nanoindentation is a promising tool for obtaining the elastic properties of thin films. However, no means exists to predict or extrapolate the elastic modulus of the top layer in multilayer systems from experimental data. The mechanical properties of PZT multilayer systems have become increasingly important in applications for MEMS devices. The indentation modulus vs. a/t behaviour of PZT on Pt/SiO2/Si wafer substrate was investigated and compared with a new analytical solution for Herztian indentation of multilayers. Five different PZT film thicknesses were indented (70, 140, 400, 700, 1500 nm), using a 10 μm radius indenter. Good agreement was found between analytical equations and experimental data. However the behaviour of the multilayer system was complex. This makes the deconvolution of film properties difficult for thicknesses less than about 1000 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 841: Symposium R – Fundamentals of Nanoindentation and Nanotribology III , 2004 , R12.3
Copyright
Copyright © Materials Research Society 2005

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References

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