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On the Mechanism of Intrinsic Gettering by Butterfly-Type Defects in Silicon

Published online by Cambridge University Press:  28 February 2011

O. Ueda ,
K. Nauka ,
J. Lagowski  and
H.C. Gatos
O. Ueda
Affiliation:
MIT, Cambridge, MA 02139
K. Nauka
Affiliation:
MIT, Cambridge, MA 02139
J. Lagowski
Affiliation:
MIT, Cambridge, MA 02139
H.C. Gatos
Affiliation:
MIT, Cambridge, MA 02139
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Abstract

We have recently found that a very effective intrinsic gettering of metal contaminants in silicon can be realized via interaction of native defects. This process makes it possible to extend intrinsic gettering of crystals with low or virtually zero oxygen concentration. Transmission electron microscopy and energy dispersive x-ray spectroscopy were used to identify the microscopic structure of the gettering centers in oxygen-free silicon. These centers exhibited butterfly-type shape and they consisted of the interstitial type extended dislocation loops of 0.1 to 0.7 μm diameter. Small precipitates (3-15 nm diameter) of metal (Cu, Ni, Fe) silicides were found inside the dislocation loops and/or on the dislocation lines. The origin of butterfly-type gettering centers will be discussed in terms of the intrinsic gettering model involving lattice supersaturation with silicon self-interstitials as a driving force for their complexing and subsequent formation of dislocation loops and precipitates which immobilize metal contaminants.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 21
Copyright
Copyright © Materials Research Society 1986

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References

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