Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-05-09T15:41:14.339Z Has data issue: false hasContentIssue false

NaCl-Assisted CVD Synthesis, Transfer and Persistent Photoconductivity Properties of Two-Dimensional Transition Metal Dichalcogenides

Published online by Cambridge University Press:  05 February 2018

Yong Xie*
Affiliation:
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi’an710071, China Case Western Reserve University, Cleveland, OH44106, USA State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Xiaohua Ma
Affiliation:
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi’an710071, China
Zhan Wang
Affiliation:
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Tang Nan
Affiliation:
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Ruixue Wu
Affiliation:
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Peng Zhang
Affiliation:
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi’an710071, China
Haolin Wang
Affiliation:
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi’an710071, China
Yabin Wang
Affiliation:
Universität Erlangen-Nürnberg, Erlangen91058, Germany
Yongjie Zhan
Affiliation:
Institute of Photonics and Photon Technology, Northwest University, Xi’an710069, China
Yue Hao
Affiliation:
Key Laboratory of Wide Band-Gap Semiconductor Technology, Xidian University, Xi’an710071, China
*
Get access

Abstract

Transition metal dichalcogenides (TMDC), such as MoS2, WS2 have attracted attention due to their mechanical and electronic properties in their two dimensional (2D) structures. Here, we report a facile growth of monolayer TMDC using oxide source materials with the assistant of NaCl. The addition of NaCl can enhance the lateral growth and widen the growth window of TMDC. Through carefully controlling the growth parameters, large area growth of TMDC can be achieved. Two steps E-beam lithography was utilized to fabricate electrodes of TMDC. The phototransistors made from the CVD grown TMDC show strong persistent photoconductivity (PPC). It was finally shown that TMDC device capping with h-BN could have suppressed PPC effects.

Type
Articles
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V. and Geim, A. K., Proceedings of the National Academy of Sciences of the United States of America 102 (30), 1045110453 (2005).Google Scholar
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M. and Lou, J., Small 8 (7), 966971 (2012).CrossRefGoogle Scholar
Lee, Y.-H., Zhang, X.-Q., Zhang, W., Chang, M.-T., Lin, C.-T., Chang, K.-D., Yu, Y.-C., Wang, J. T.-W., Chang, C.-S., Li, L.-J. and Lin, T.-W., Advanced Materials 24 (17), 23202325 (2012).Google Scholar
Radisavljevic, B, Radenovic, A, Brivio, J, Giacometti, V and Kis, A Nat Nano 6 (3), 147150 (2011).CrossRefGoogle Scholar
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X. and Zhang, H., ACS Nano 6 (1), 7480 (2011).Google Scholar
Liu, B., Chen, L., Liu, G., Abbas, A. N., Fathi, M. and Zhou, C., ACS Nano 8 (5), 53045314 (2014).CrossRefGoogle Scholar
Sarkar, D., Liu, W., Xie, X., Anselmo, A. C., Mitragotri, S. and Banerjee, K., ACS Nano 8 (4), 39924003 (2014).Google Scholar
Ling, X., Lee, Y.-H., Lin, Y., Fang, W., Yu, L., Dresselhaus, M. S. and Kong, J., Nano Letters 14 (2), 464472 (2014).Google Scholar
van der Zande, A. M., Huang, P. Y., Chenet, D. A., Berkelbach, T. C., You, Y., Lee, G.-H., Heinz, T. F., Reichman, D. R., Muller, D. A. and Hone, J. C., Nat Mater 12 (6), 554561 (2013).CrossRefGoogle Scholar
Xie, Y., Wang, Z., Zhan, Y., Zhang, P., Wu, R., Jiang, T., Wu, S., Wang, H., Zhao, Y., Nan, T. and Ma, X., Nanotechnology 28 (8) (2017).Google Scholar
Li, S., Wang, S., Tang, D.-M., Zhao, W., Xu, H., Chu, L., Bando, Y., Golberg, D. and Eda, G., Applied Materials Today 1 (1), 6066 (2015).CrossRefGoogle Scholar
Lin, Y., Ling, X., Yu, L., Huang, S., Hsu, A. L., Lee, Y.-H., Kong, J., Dresselhaus, M. S. and Palacios, T., Nano Letters 14 (10), 55695576 (2014).Google Scholar
Zhan, W., Yong, X., Haolin, W., Ruixue, W., Tang, N., Yongjie, Z., Jing, S., Teng, J., Ying, Z., Yimin, L., Mei, Y., Weidong, W., Qing, Z., Xiaohua, M. and Yue, H., Nanotechnology 28 (32), 325602 (2017).Google Scholar
Xie, Y., Wang, Z. and Ma, X., to be submitted (2017).Google Scholar
Zhang, W., Huang, J.-K., Chen, C.-H., Chang, Y.-H., Cheng, Y.-J. and Li, L.-J., Advanced Materials 25 (25), 34563461 (2013).CrossRefGoogle Scholar
Perea-López, N., Lin, Z., Pradhan, N. R., Iñiguez-Rábago, A., Elías, A. L., McCreary, A., Lou, J., Ajayan, P. M., Terrones, H., Balicas, L. and Terrones, M., 2D Materials 1 (1), 011004 (2014).Google Scholar
Xie, Y., Madel, M., Feneberg, M., Neuschl, B., Jie, W. Q., Hao, Y., Ma, X. H. and Thonke, K., Materials Research Express 3 (4), 045011 (2016).CrossRefGoogle Scholar
Jeon, S., Ahn, S.-E., Song, I., Kim, C. J., Chung, U. I., Lee, E., Yoo, I., Nathan, A., Lee, S., Robertson, J. and Kim, K., Nat Mater 11 (4), 301305 (2012).Google Scholar
Madel, M., Huber, F., Mueller, R., Amann, B., Dickel, M., Xie, Y. and Thonke, K., Journal of Applied Physics 121 (12), 124301 (2017).CrossRefGoogle Scholar
Feng, P., Mönch, I., Harazim, S., Huang, G., Mei, Y. and Schmidt, O. G., Nano Letters 9 (10), 34533459 (2009).CrossRefGoogle Scholar
Reshchikov, M. A., Foussekis, M. and Baski, A. A., J Appl Phys 107 (11), 113535 (2010).Google Scholar
Wu, Y.-C., Liu, C.-H., Chen, S.-Y., Shih, F.-Y., Ho, P.-H., Chen, C.-W., Liang, C.-T. and Wang, W.-H., Scientific Reports 5, 11472 (2015).Google Scholar
Andres, C.-G., Michele, B., Rianda, M., Vibhor, S., Laurens, J., Herre, S. J. v. d. Z. and Gary, A. S., 2D Materials 1 (1), 011002 (2014).Google Scholar