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The Roles of Several E′ Variants in Thermal Gate Oxide Reliability

Published online by Cambridge University Press:  22 February 2011

John F. Conley Jr ,
P.M. Lenahan ,
H.L. Evans ,
R.K. Lowry  and
T.J. Morthorst
John F. Conley Jr
Affiliation:
The Pennsylvania State University, University Park, PA 16802
P.M. Lenahan
Affiliation:
The Pennsylvania State University, University Park, PA 16802
H.L. Evans
Affiliation:
Harris Semiconductor Reliability Engineering, Melbourne, FL 32901
R.K. Lowry
Affiliation:
Harris Semiconductor Reliability Engineering, Melbourne, FL 32901
T.J. Morthorst
Affiliation:
Harris Semiconductor, Findlay, OH
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Abstract

We combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin film SiO2 on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 37
Copyright
Copyright © Materials Research Society 1994

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References

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