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Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

Published online by Cambridge University Press:  31 January 2011

Hiroshi Kambayashi ,
Yuki Niiyama ,
Takehiko Nomura ,
Masayuki Iwami ,
yoshihiro Satoh  and
Sadahiro Kato
Hiroshi Kambayashi
Affiliation:
kambayashi.hiroshi@apd.fites.jp, Furukawa Electric Co., Ltd., Yokohama, Japan
Yuki Niiyama
Affiliation:
niiyama.yuki@apd.fites.jp, Furukawa Electric Co., Ltd., Yokohama, Japan
Takehiko Nomura
Affiliation:
nomu3@apd.fites.jp, Furukawa Electric Co., Ltd., Yokohama, Japan
Masayuki Iwami
Affiliation:
iwami@apd.fites.jp, Furukawa Electric Co., Ltd., Yokohama, Japan
yoshihiro Satoh
Affiliation:
ysatoh@apd.fites.jp, Furukawa Electric Co., Ltd., Yokohama, Japan
Sadahiro Kato
Affiliation:
sadakato@apd.fites.jp, Furukawa Electric Co., Ltd., Yokohama, Japan
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Abstract

We have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

Keywords

III-Velectronic materialenvironmentally benign
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I09-05
Copyright
Copyright © Materials Research Society 2010

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