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Characterization of Heterointerfaces in Thin-Film Transistors by Cross-Sectional Transmission Electron Microscopy

Published online by Cambridge University Press:  10 February 2011

K. Kuroda ,
S. Tsuji ,
Y. Hayashi  and
H. Saka
K. Kuroda
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 46401, Japan, electric mail: kuroda@numse.nagoya-u.ac.jp
S. Tsuji
Affiliation:
Yamato Laboratory, IBM Japan, Ltd., Shimotsurura, Yamato-shi, Kanagawa 242, Japan
Y. Hayashi
Affiliation:
Yamato Laboratory, IBM Japan, Ltd., Shimotsurura, Yamato-shi, Kanagawa 242, Japan
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 46401, Japan
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Abstract

Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are now widely used as elements for active matrix liquid crystal displays. The nanometer-scale multilayered structure of a-Si:H TFTs has been characterized by cross-sectional transmission electron microscopy (TEM). The discrete layer construction of a faulty TFTs and the generation of defects during manufacturing processes have been investigated. A combination of focused ion beam (FIB) etching and cross-sectional TEM leads to a successful failure analysis. A contamination layer with a thickness of 10–30 nm and microvoids inside multilayers are identified in faulty TFTs. An a-Si layer on silicon nitride (SiNx) is crystallized during TEM observation. Electron energy loss spectroscopy analysis indicates that the diffusion of nitrogen into a-Si layer causes the crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 67
Copyright
Copyright © Materials Research Society 1997

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References

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