Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T01:16:10.784Z Has data issue: false hasContentIssue false

Langmuir-Blodgett Film Waveguide with The Nonlinearity Inversion in The Thickness Direction

Published online by Cambridge University Press:  16 February 2011

Nobutoshi Asai
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-Cho, Hodogaya-Ku, Yokohama 240, Japan
Ichiro Fujiwara
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-Cho, Hodogaya-Ku, Yokohama 240, Japan
Hitoshi Tamada
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-Cho, Hodogaya-Ku, Yokohama 240, Japan
Jun'etsu Seto
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-Cho, Hodogaya-Ku, Yokohama 240, Japan
Get access

Abstract

A second order nonlinear optical susceptibility inversion structure in the thickness direction (NIST) is proposed for enhancing the efficiency of Cerenkov radiation type phase matched second harmonic generation (CRPM-SHG). With the aid of the coupled-mode theory, it is analyzed that the efficiency is enhanced by 50 to 100 times by introducing the NIST structure to a waveguiding layer made of a 2-docosylamino-5-nitropyridine (DCANP) Langmuir-Blodgett (LB) film, and that the optical conditions for the most efficient CRPM-SHG are equivalent to those for guided mode SHG at the cutoff points of the modes. Several fabrication methods are possible for NIST waveguides. For the first time, a NIST waveguide has been fabricated using a DCANP-LB film by employing a novel and simple technique in which the substrate inversion is carried out during the dipping process. The inversion in nonlinearity was confirmed using the maker fringe method and polarized absorption spectra. A NIST planar waveguide of 260 Monolayers of DCANP (570 nm thick) was fabricated. Intense CRPM-SHG was observed from the waveguide when a YAG laser was coupled into it. The intensity was 20 to 30 times larger than that of a conventional waveguide of the same thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Decher, G., Tieke, B., Bosshard, Ch., and Gunter, P., Ferroelectrics 91, 193 (1989).Google Scholar
[2] Era, M., Nakamura, K., Tsutsui, T., Takahara, K., Niino, H., Isomura, K., and Taniguchi, H., Jpn. J. Appl. Phys. 29, L2261 (1990).CrossRefGoogle Scholar
[3] Bosshard, Ch., Florsheimer, M., Kupfer, M., and Gunter, P., Opt. Comm. 85(2–3), 247 (1991).CrossRefGoogle Scholar
[4] Asai, N., Tamada, H., Fujiwara, I., and Seto, J., J. Appl. Phys., 72, 4521 (1992).Google Scholar
[5] Tamada, H., IEEE J. Quantum Electron. QE-27, 502 (1991).Google Scholar
[6] Hayata, K., Yanagawa, K., and Koshiba, N., Appl. Phys. Lett. 56 (3), 206 (1990).Google Scholar
[7] Tien, P.K., Ulrich, R., and Martin, R.J., Appl. Phys. Lett. 17, 447 (1970).CrossRefGoogle Scholar
[8] Fujiwara, I., Asai, N., and Howarth, V., Thin solid Films 221, 285 (1992).Google Scholar
[9] Bosshard, Ch., Kupfer, M., Gunter, P., Pasquier, C., Zahir, S., and Seifert, M., Appl. Phys. Lett. 56, 1204 (1990).Google Scholar
[10] Howarth, V., Asai, N., Kishii, N., and Fujiwara, I., Appl. Phys. Lett. 61, 1616 (1992).Google Scholar
[11] Miyamoto, Y., Kaifu, K., Koyano, T., Saito, M., and Kato, M., Jpn. J. Appl. Phys. 30(9B), L1647 (1991).Google Scholar
[12] Clays, K., Penner, T. L., Armstrong, N. J., and Robello, D. R., Prc. SPIE 1775, 326 (1992).Google Scholar
[13] Khanarian, G., Norwood, R. A., Haas, D., Feuer, b., and Karim, D., Appl. Phys. Lett. 57, 977 (1990).Google Scholar