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Growth And Characterization of Thin Wet Oxides Grown by Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

R. Sharangpani ,
J. Das ,
S. P. Tay ,
R. P. S. Thakur ,
T. C. Yang  and
K. C. Saraswat
R. Sharangpani
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
J. Das
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
S. P. Tay
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
R. P. S. Thakur
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA 95134
T. C. Yang
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
K. C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
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Abstract

The growth of high quality thin (<10 nm) oxides is one of the most critical steps in the fabrication of the entire spectrum of silicon based devices. Rapid thermal wet oxidation is emerging as a promising technique for this application due to features such as higher throughput, superior oxide quality, faster response and precise thickness control. In this paper, an integrated pyrogenic steam generator -RTP system is described. Theoretical and experimental growth curves along with thickness contour maps and preliminary reliability results are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 143
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Tanabe, Y., Nakatsuka, Y., Sakai, S., Miyazaki, T., and Nagahama, T., Proc. 1997 IEEE International Symposium on Semiconductor Manufacturing, Meeting Plus, (1997) p. 49.Google Scholar
[2] Irene, E.A., J. Electrochemical Soc., 125(10), p. 1708, (1978).Google Scholar
[3] Li, G. Q. and Cheng, Y.C., J. Electrochem. Soc., 135(2), 1988, p. 418 (1988).Google Scholar
[4] Hasegawa, E., Isitani, A., Akimoto, K., Tsukiji, M., and Ohta, N., J. Electrochem. Soc., 142(1), p. 273 (1995).Google Scholar
[5] Massoud, H.Z., in Rapid Thermal Processing, Science and Technology, edited by R.B. Fair, 1993.Google Scholar
[6] Lee, S. K., Proc., Rapid Thermal and Integrated Processing, edited by Wittmer, M., Stimmel, J. and Strathman, M., (Mater. Res. Soc. Proc. 71, Pittsburgh, PA 1986) p. 49.Google Scholar
[7] Nulman, J., Krusius, J.P. and Gat, A., IEEE Electron Device Letters EDL–6, p. 205 (1986).Google Scholar
[8] Murarka, S.P. and Peckerar, M.C., Electronic Materials, Science and Technology, Academic Press, San Diego, 1989, p. 122.Google Scholar
[9] ibid, p. 105 Google Scholar
[10] Kao, S.C. and Doremus, R.H., J. Electrochem. Soc., 141(7), p. 1832 (1994).Google Scholar
[11] Deal, B.E. and Grove, A.S., J. Appl. Phys., 36, p. 3370 (1995).Google Scholar
[12] Massoud, H. Z., Plummer, J. D. and Irene, E. A., J. Electrochem. Soc. 132(11), p. 2685, (1985).Google Scholar
[13] Massoud, H. Z., Plummer, J. D. and Irene, E. A., J. Electrochem. Soc., 132(7) p. 1745, (1985).Google Scholar
[14] Araujo, C.A. P. and Gallegos, R.W., J. Electrochem. Soc., 136(9), p. 2673 (1989).Google Scholar
[15] Irene, E. A. and Ghez, R., J. Electrochemical Society, 124(11), p. 1757, 1977.Google Scholar