Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T19:32:36.930Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition

Published online by Cambridge University Press:  04 February 2014

T. Hanawa ,
N. Kikuchi ,
K. Nishio ,
K. Tonooka ,
R. Wang  and
T. Mamiya
T. Hanawa
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JAPAN Graduate School of Industrial Science and Technology, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, JAPAN
N. Kikuchi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JAPAN Graduate School of Industrial Science and Technology, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, JAPAN
K. Nishio
Affiliation:
Graduate School of Industrial Science and Technology, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, JAPAN
K. Tonooka
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JAPAN
R. Wang
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JAPAN
T. Mamiya
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, JAPAN
Get access

Abstract

Lead-free, piezoelectric (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were epitaxially grown onto (100) SrTiO3 substrate via pulsed laser deposition. The effects of post-annealing temperature on the crystal phases, mosaic spread, and chemical composition of the deposited (Na,K)NbO3 and (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were analyzed. Results indicate the epitaxial growth of (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at an oxygen pressure (PO2) of ≥40 Pa and substrate temperature (Ts) of 800°C. The alkaline-deficiency could be suppressed in the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at PO2 ≥ 70 Pa. AFM profile of the (Na,K)NbO3 post-annealed at 1000°C indicates the epitaxial growth of film with atomically flat step-terrace structure, while that of the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 film post-annealed at 1200°C shows relatively smooth surface with step-terrace structure and several cubic crystals. It was also found that the preferential evaporation of alkaline components could be suppressed by annealing under covered substrate condition.

Keywords

epitaxypiezoelectriclaser ablation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 19 - 24
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Jaffe, B., Cook, W. R. Jr. and Jaffe, H., Piezoelectric Ceramics (Academic Press, London, 1971) p.135–184 Google Scholar
Uchino, K., Ferroelectric Devices (Marcel Dekker, Inc., New York, 2000) p.145–220 Google Scholar
“Adaptation to scientific and technical progress of Annex II to Directive 200/53/EC (ELV) and of the Annex to Directive 2002/95/EC (RoHS) Final Report”, Öko-Institute e.V.-Institute for Applied Ecology, Germany Google Scholar
Bechman, R., J. Acoust. Soc. Am. 28, 347 (1956)CrossRefGoogle Scholar
Wada, S., Yasuno, H., Hoshina, T., Nan, S. M., Kanemoto, H. and Tsurumi, T., J. Appl. Phys. 98, 014109 (2005)CrossRefGoogle Scholar
Henning, D. F. K., Metzmacher, C. and Schreinemgcher, S., J. Am. Ceram. Soc. 42, 179 (2001)CrossRefGoogle Scholar
Buhrer, C. F., J. Chem. Phys. 36, 798 (1962)CrossRefGoogle Scholar
Suchanicz, J., Roleder, K., Kania, A. and Handerek, J., Ferroelectrics 77, 107 (1988)CrossRefGoogle Scholar
Saito, T., Wada, T., Adachi, H. and Kanno, I., Jpn. J. Appl. Phys. 43, 6627 (2004)CrossRefGoogle Scholar
Nakashima, Y., Sakamoto, W., Maiwa, H., Shimura, T. and Yogo, T., Jpn. J. Appl. Phys. 46, L311 (2004)CrossRefGoogle Scholar
Subbarao, E. C., J. Am. Ceram. Soc. 45, 166 (1962)CrossRefGoogle Scholar
Wang, R., Bando, H. and Itoh, M., IMF-ISAF 2009 Conf. Xi’an, DO-033, (2009)CrossRefGoogle Scholar
Sakurai, K., Hanawa, T., Kikuchi, N., Nishio, K., Tonooka, K., Wang, R., Bando, H., and Takashima, H., in Oxide Semiconductors and Thin Films , edited by Schleife, A., Allen, M., Arnold, C.B., Durbin, S.M., Pryds, N., Schneider, C.W. and Veal, T., (Mater. Res. Soc. Symp. Proc 1494, Pittsburgh, PA, 2013) pp. 227–232 Google Scholar
Lattice constant of the NKN- BZ- BLT was estimated from sintered compact for a target.Google Scholar