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Interactions Of Evaporated Nickel And Silicon Thin Films

Published online by Cambridge University Press:  26 February 2011

L. R. Zheng ,
L. S. Hung  and
J. W. Mayer
L. R. Zheng
Affiliation:
Department of Materials Science and Engineering, Cornell Univercity, Ithaca, NY14853
L. S. Hung
Affiliation:
Department of Materials Science and Engineering, Cornell Univercity, Ithaca, NY14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell Univercity, Ithaca, NY14853
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Abstract

Interactions of evaporated Ni and Si thin films were investigated by a combination of backseat tering spectrometry and transmission electron microscopy. The presence of amorphous Si has no significant effects on Ni2Si and NiSi formation, but it drastically lowers the formation temperature of NiSi. Experiments with evaporated thin markers established that Ni is the dominant diffusing species in the growth of the three suicides. The stability of NiSi was examined by sequential evaporation of Ni34Si66 and Ni50Si50 thin films both on Si(100) and on evaporated Si substrates. The results showed that NiSi2 grows at the expence of NiSi when the stucture is in contact with evaporated Si, while it dissociates into NiSi and Si when in contact with single crystal Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 45
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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